Investigation on spurious mode suppression in 3.8-GHz SH-mode SAW resonators based on LiNbO 3 /SiO 2 /Si multilayer structure
Cheng Tu,Ting-yang Zhang,Zhuo Zhang,Qin-wen Huang,Xiao-Sheng Zhang
DOI: https://doi.org/10.1088/1361-6439/ad2f49
2024-03-04
Journal of Micromechanics and Microengineering
Abstract:LiNbO 3 (LN)/SiO 2 /Si multilayer structure has recently attracted much attention due to its superior performance in realizing wideband radio frequency (RF) acoustic filters. However, the spurious modes, which is commonly found in LN-on-insulator (LNOI) resonators, often cause in-band ripples and deteriorated out-of-band suppression level. Though much research work has been done in suppression of spurious modes in LNOI resonators operating in below-3GHz region, little has been reported for the over-3GHz devices. This work investigates the spurious mode suppression techniques for a 3.8-GHz -shear horizontal (SH) mode 36oYX-LNOI SAW device based on LN/SiO2/Si multilayer structure. Specifically, we explored different techniques based on apodized electrodes, dummy electrodes and double busbar structure. The measured results show that the effect of spurious mode suppression can be improved by combining the benefits of these techniques, which provides a promising solution for designing spurious-free LNOI SAW resonators operating above 3 GHz.
engineering, electrical & electronic,nanoscience & nanotechnology,instruments & instrumentation,physics, applied