Abstract:INTRODUCTION Gallium nitride (GaN) is of particular interest due to its direct wide band gap energy (3.4 eV), high breakdown field, high electron saturation velocity and outstanding physicochemical properties [1-2]. For device applications, a GaN film is generally prepared by metal organic chemical vapor deposition (MOCVD) on sapphire substrates. However, in these heteroepitaxial GaN layers, the lattice and thermal mismatch between GaN and sapphire leads to a large number of dislocations [3]. As a result, flat, clean and undamaged surface is essential to form homo-epitaxial GaN layers with a low dislocation density [4]. However, GaN is very difficult to achieve an ideal polishing efficiency because of its high hardness and stable chemical properties [5]. Mechanical polishing with hard abrasives such as diamond and alumina particles can achieve flatness rapidly, but it can introduce scratch damages [6]. Wet etching can planarize GaN surface without damage by using photo electrochemical treatment, hot phosphoric acid, and molten KOH [7], but it produces rough surface. An etching method, which termed catalyst-referred etching (CARE) has been reported to produce an atomically flat damagefree surface of GaN [8], but the removal rate was just 3.4-3.8 nm/h [5]. Chemical-mechanical polishing (CMP) is considered to be an effective method to realize atomic-level smooth and damages free surface of materials. The studies of Hayashi et al.[9] suggested the importance of the selection of abrasive particles and led to the conclusion that abrasive should be softer than GaN to suppress the introduction of sub-surface damage layers. Colloidal silica based slurry is one of the possible candidates to achieve a damage free surface with a true CMP process as colloidal silica is much softer than GaN [10]. Hideo Aida et al. [11] reported the CMP process of gallium face of GaN with colloidal silica based slurry. In their studies, there were a lot of scratches generated during polishing process, which under the condition of abrasive particle size and concentration of 40nm and 40% respectively. It took him about 150 h to obtain damage-free surface. In our previous published work, we got damage-free surface within 9 h by using Al2O3 and colloidal silica slurry respectively [12]. The purpose of this work is to make clear of the principal influence factors in scratches on the surface of GaN during CMP process, to fulfill controllable and optimization CMP process, and provide a reference basis for the material removal mechanism of GaN.

Effect of Graphene on the Surface Nanomechanical Behavior and Subsurface Layer of GaN Damage During Nanogrinding Using Molecular Dynamics Simulation

Damage evolution and removal behaviors of GaN crystals involved in double-grits grinding

Investigation on nano-grinding process of GaN using molecular dynamics simulation: Nano-grinding parameters effect

Molecular Dynamics Simulation of Laser Assisted Grinding of GaN Crystals

Atomic-scale simulation of ultrasonic vibration-assisted polishing process for graphene/GaN-layered composites

Study on grinding removal mechanism and subsurface damage of bionic layered graphene ceramic matrix composites

Surface Micro-Morphology Model Involved in Grinding of GaN Crystals Driven by Strain-Rate and Abrasive Coupling Effects

Understanding the machining mechanism in ultrasonic vibration-assisted nanogrinding of GaN

Nanoscale Mechanism of Suppression of Friction and Wear of the Diamond Substrate by Graphene

Effects of Grain Boundary on Wear of Graphene at the Nanoscale: A Molecular Dynamics Study

Dependence of Tribological Behavior of GaN Crystal on Loading Direction: A Molecular Dynamics Study

Wear Behaviors and Plastic Deformation Mechanisms Induced by Nano-Grinding of Indium-Doped Gallium Nitride Single Crystal

Research on the material removal mechanism of vibration-assisted nano-scratch on single-crystal GaN by molecular dynamics

Deformation and removal mechanism of single crystal gallium nitride in nanoscratching

Abrasive machining induced surface layer damage behavior and formation mechanism of monocrystalline β-Ga 2 O 3 : A comparative study of nanoindentation and nanogrinding

Suppressing Nanoscale Wear by Graphene/Graphene Interfacial Contact Architecture: A Molecular Dynamics Study.

Effect of Graphene Nanoplatelet Content on Mechanical and Elevated-Temperature Tribological Performance of Self-Lubricating ZE10 Magnesium Alloy Nanocomposites

Investigation of vibration-assisted nano-grinding of gallium nitride via molecular dynamics

Investigating the Effects of Graphene Nanoplatelets and Al4C3 on the Tribological Performance of Aluminum-Based Nanocomposites

Analysis of scratches generated on gan substrates during polishing

Synergistic Friction-Reducing and Anti-Wear Behaviors of Graphene with Micro- and Nano-Crystalline Diamond Films