Dual-Mode Conversion of Photodetector and Neuromorphic Vision Sensor Via Bias Voltage Regulation on a Single Device.

Siyu Feng,Jiangxu Li,Lizhi Feng,Zitong Liu,Junchao Wang,Cong Cui,Ouxiang Zhou,Lijie Deng,Hanning Xu,Bing Leng,Xing-Qiu Chen,Xin Jiang,Baodan Liu,Xinglai Zhang
DOI: https://doi.org/10.1002/adma.202308090
IF: 29.4
2023-01-01
Advanced Materials
Abstract:Simultaneous implementation of photodetector and neuromorphic vision sensor (NVS) on a single device faces a great challenge, due to the inherent speed discrepancy in their photoresponse characteristics. In this work, a trench-bridged GaN/Ga2 O3 /GaN back-to-back double heterojunction array device is fabricated to enable the advanced functionalities of both devices on a single device. Interestingly, the device shows fast photoresponse and persistent photoconductivity behavior at low and high voltages, respectively, through the modulation of oxygen vacancy ionization and de-ionization processes in Ga2 O3 . Consequently, the role of the optoelectronic device can be altered between the photodetector and NVS by simply adjusting the magnitude of bias voltage. As a photodetector, the device is able to realize fast optical imaging and optical communication functions. On the other hand, the device exhibits outstanding image sensing, image memory, and neuromorphic visual pre-processing as an NVS. The utilization of NVS for image pre-processing leads to a noticeable enhancement in both recognition accuracy and efficiency. The results presented in this work not only offer a new avenue to obtain complex functionality on a single optoelectronic device but also provide opportunities to implement advanced robotic vision systems and neuromorphic computing.
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