Effect of Passivation on Buried Interface of CsPbI2Br Perovskite Films

Xingming Yang,Junjie Jiang,Cuiping Xu,Peiqi Ji,Ziyi Xu,Ligang Ma,Hongling Cai,Fengming Zhang,Xiaoshan Wu

DOI: https://doi.org/10.1063/5.0152782

IF: 4

2023-01-01

Applied Physics Letters

Abstract:Passivation on the surface or interface is one of the key issues in fabricating the efficient and stable perovskite solar cells (PSCs). In this Letter, we report a way to passivate the buried interface on the perovskite film by optimizing the growth kinetics of the precursor film. A solvent-controlled growth (SCG) strategy of the precursor film is adopted, that is, inducing the solvent volatilization of the precursor film before high-temperature annealing. It is found that the solvent distribution of the precursor film is the key to the growth kinetics of perovskite films. The vacuum pretreated precursor film can obtain a dense buried interface to avoid the generation of small grains and pores at the interfaces of the perovskite/electron transport layer after high temperature crystallization. After passivation, non-radiative recombination in CsPbI2Br films is suppressed, accompanied by favorable carrier separation and extraction at the interface. The power conversion efficiency of all-inorganic CsPbI2Br carbon-based PSCs without a hole transport layer reaches 13.46%. The SCG strategy on the precursor films provides a way to passivate the buried interface of PSCs.