An A-D-A-Type Thermally Activated Delayed Fluorescence Emitter with Intrinsic Yellow Emission Realizing Record-High Red/NIR OLEDs Upon Modulating Intermolecular Aggregations

Hui Wang,Jia-Xiong Chen,Yi-Zhong Shi,Xi Zhang,Lu Zhou,Xiao-Yao Hao,Jia Yu,Kai Wang,Xiao-Hong Zhang
DOI: https://doi.org/10.1002/adma.202307725
IF: 29.4
2024-01-01
Advanced Materials
Abstract:Realizing efficient red/near-infrared (NIR) electroluminescence (EL) by precisely modulating molecular aggregations of thermally activated delayed fluorescence (TADF) emitters is an attractive pathway, yet the molecular designs are elusive. Here, a new approach is proposed to manage molecular aggregation via a mild-twist acceptor-donor-acceptor (A-D-A)-type molecular design. A proof-of-concept TADF molecule, QCN-PhSAC-QCN, is developed that furnishes a fast radiative rate and obvious aggregation-induced emission feature. Its emission bands can be facilely shifted from intrinsic yellow to the red/NIR region via fine-tuning doping levels and molecular aggregates while maintaining elegant photoluminescence quantum yields benefiting from suppressed exciton annihilation processes. As a result, a QCN-PhSAC-QCN-based organic light-emitting diode (OLED) exhibits a record-setting external quantum efficiency (EQE) of 39.1% at a doping ratio of 10 wt.%, peaking at 620 nm. Moreover, its nondoped NIR OLED affords a champion EQE of 14.3% at 711 nm and retains outstanding EQEs of 5.40% and 2.35% at current densities of 10 and 100 mA cm-2, respectively, which are the highest values among all NIR-TADF OLEDs at similar density levels. This work validates the feasibility of such mild-twist A-D-A-type molecular design for precisely controlling molecular aggregation while maintaining high efficiency, thus providing a promising pathway for high-performance red/NIR TADF OLEDs. State-of-the-art red/near-infrared organic light-emitting diodes are realized by modulating molecular aggregation based on an intrinsic yellow acceptor-donor-acceptor-type molecule with mild twists. Its doped red device delivers a record-setting external quantum efficiency (EQE) of 39.1% at 620 nm. Furthermore, its nondoped near-infrared device also offers a topmost EQE of 14.3% at 711 nm and retains decent EQEs at high current densities.image
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