Abstract:603 Objectives Digital Silicon Photomultiplier has recently emerged as a promising photodetector for ToF PET systems. It not only addresses a number of challenges encountered by analog SiPM such as power consumption and noise susceptibility, but also provides additional benefits including low cost and possibility to monolithically integrate the single-photon avalanche photodiode (SPAD) on the same substrate with complex circuitry[1-4]. In this study, a high-resolution, ultra-low power time-to-digital converter (TDC) was implemented to push the limit of timing resolution and improve image quality[5]. Methods Our SPAD array is fabricated in 130nm CMOS technology, using an n+/p-well junction[6]. A guard ring structure is formed to suppress the premature edge breakdown[7]. An improved passive-quenching, active-reset front-end circuit is coupled to each SPAD cell to disable noisy cells. Fig.1(a) shows the layout of our 8x8 SPAD array. Our TDC employs the Vernier Gated Ring Oscillator to improve the time resolution and reduces power consumption by a gated-mode operation. Fig.1(b) gives the TDC layout. Results The prototype chip is fabricated in standard 130nm CMOS, achieving 7.3ps resolution, 11ps precision, 1.2mW power consumption and 0.03mm2 area. A rms integral nonlinearity(INL) of 1.2LSB is obtained with the help of INL look-up-table calibration. Table I compares the performance with recent relevent works. Conclusions The design and characterization of a dSiPM prototype fabricated in a 130 nm standard CMOS is reported. It comprises of an 8x8 SPAD array and a high-resolution TDC, whose compact size makes it suitable for an array configuration. For the future work, the SPAD array and TDC will be coupled to scintillation crystals to evaluate energy resolution and time resolution for ToF PET imaging. Research Support The authors gratefully acknowledge support from the Canada Research Chair program, NSERC of Canada, CFI, FedDev Ontario, NSERC ResEau strategic network, NCE IC-IMPACTS and CMC Microsystems.

A Backside-Illuminated 3.5 mu m Pixel With 86% Demodulation Contrast at 1.0 V Voltage Swing for Indirect Time-of-Flight Image Sensors

A Two-Tap Indirect Time-of-Flight CMOS Image Sensor With Pump Gate Modulator for Low-Power Applications

SOI CMOS Imager with Suppression of Cross-Talk

100 Ghz Integrated Cmos Passive Imager with > 100 Mv/W Responsivity, 23fw/root Hz Nep

Double Junction Photodiode for X-Ray Cmos Sensor Ic

A High-resolution Colloidal Quantum Dot Imager by Monolithic Integration

Fully Depleted SOI Pixel Detector with Multijunction Structure in P-Type Substrate

A Low-Power i-ToF LiDAR With Nonlinearity Self-Calibration Technique

Novel CMOS Image Sensor Pixel to Improve Charge Transfer Speed and Efficiency by Overlapping Gate and Temporary Storage Diffusing Node*

A 320x240 I-ToF CMOS Image Sensor with 2-Tap 5.6m Pixel and Mismatch-Nonlinearity Suppression

A Thin-Film Pinned-Photodiode Imager Pixel with Fully Monolithic Fabrication and beyond 1Me- Full Well Capacity

A CMOS Time-of-Flight Image Sensor with High Dynamic Range Digital Pixel

Hybrid MOS-PN photodiode with positive feedback for pulse-modulation imaging

Compact Numerical Modeling of Indirect Time-of-Flight CMOS Image Sensors

Development of a High Performance Digital Silicon Photomultiplier (dSiPM) for ToF PET Imaging

Low Dark-Current Quantum-Dot Infrared Imager

Advanced Back-Illuminated Silicon Photomultipliers With Surrounding P+ Trench

A Centripetal Collection Image Sensor(ccis) Based on Back Gate Modulation Achieving 1T Submicron Pixel

Junction-Optimized SPAD With 50.6% Peak PDP and 0.64 cps/μm2 DCR at 2 V Excess Bias Voltage in 130 nm CMOS

A Wide Spectral Response Single Photon Avalanche Diode for Backside-Illumination in 55-Nm CMOS Process

In-Sensor Polarimetric Optoelectronic Computing Based on Gate-Tunable 2D Photodetector