Antisymmetric Peaks Observed in the Hall Resistance of Fe5GeTe2 Ferromagnets: Implications for Spintronic Devices

Ying Zhang,Shasha Wang,Yan Feng,Ping Liu,Yalin Lu,Bin Xiang
DOI: https://doi.org/10.1021/acsanm.3c02569
IF: 6.14
2023-01-01
ACS Applied Nano Materials
Abstract:Fe5GeTe2 is a van der Waals ferromagneticmetal, which has a Curie temperature at room temperature higher thanthat of Fe3GeTe2. Despite extensive studieson Fe5GeTe2's performance, its magnetismremains poorly understood, particularly the in-plane electrical transportand angle dependence, which have not been reported yet. In this paper,we report angle-dependent Hall resistance and magnetoresistance inFe(5)GeTe(2) flakes, demonstrating that the Hallresistance shows an antisymmetric peak when the magnetic field isparallel to the current. Systematic temperature and angle dependencemagneto-transport characterizations reveal that the observed antisymmetricpeak in the Hall resistance is closely correlated with the magneticorder in Fe5GeTe2, providing evidence of itssignificant in-plane magnetic anisotropy. Our findings offer insightsinto the electrical transport properties of Fe5GeTe2, which are essential for the development and applicationof Fe5GeTe2-based spintronic devices.
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