Abstract:Topological insulators (TIs) have shown promise as a spin-generating layer to switch the magnetization state of ferromagnets via spin-orbit torque (SOT) due to charge-to-spin conversion efficiency of the TI surface states that arises from spin-momentum locking. However, when TIs are interfaced with conventional bulk ferromagnetic metals, the combination of charge transfer and hybridization can potentially destroy the spin texture and hamper the possibility of accessing the TI surface states. Here, we fabricate an all van der Waals (vdW) heterostructure consisting of molecular beam epitaxy grown bulk-insulating Bi2Se3 and exfoliated 2D metallic ferromagnet Fe3GeTe2 (FGT) with perpendicular anisotropy. By detecting the magnetization state of the FGT via anomalous Hall effect and magneto-optical Kerr effect measurements, we determine the critical switching current density for magnetization switching to be Jc ≈ 1.2 × 106 A/cm2, the lowest reported for the switching of a perpendicular anisotropy ferromagnet using Bi2Se3. From second harmonic Hall measurements, we further determine the SOT efficiency (ξDL) to be in the range of 1.8 ± 0.3 and 1.4 ± 0.08 between 5 and 150 K, comparable to the highest values reported for Bi2Se3. Our density functional theory calculations find that the weak interlayer interactions at the Bi2Se3/FGT interface lead to a weakened dipole at the interface and suppress the proximity induced magnetic moment on Bi2Se3. This enables direct access to the TI surface states contributed by the first quintuple layer, where the spins are singly degenerate with significant net in-plane spin polarization. Our results highlight the clear advantage of all-vdW heterostructures with weak interlayer interactions that can enhance SOT efficiency and minimize critical current density, an important step toward realizing next generation low-power nonvolatile memory and spintronic devices.

The Giant Inverse Spin Hall Effect in Semiconductor Alloy/Ferromagnetic Insulator (ge1–xbix/yig) Spin Heterojunction

The Giant Inverse Spin Hall Effect in Semiconductor Alloy/Ferromagnetic Insulator (Ge 1– x Bi x /YIG) Spin Heterojunction

Anomalous and inverse spin Hall effects in Pt1-xBix/(YLuBiCa)3(FeGa)5O12 heterojunction

Spin pumping and laser modulated inverse spin Hall effect in yttrium iron garnet/germanium heterojunctions

Strongly exchange-coupled and surface-state-modulated magnetization dynamics in Bi2Se3/YIG heterostructures

Inverse Spin Hall Effect enhancement in Pt layer doped by Ge

Giant Spin Hall Effect Induced By Skew Scattering From Bismuth Impurities Inside Thin Film Cubi Alloys

Strong interface-induced spin-charge conversion in YIG/Cr heterostructures

Probing exchange bias at the surface of a doped ferrimagnetic insulator

Giant tunable spin Hall angle in sputtered Bi2Se3 controlled by an electric field

Magnetic coupling in Y$_3$Fe$_5$O$_{12}$/Gd$_3$Fe$_5$O$_{12}$ heterostructures

Large spin Hall angle in nonmagnetic PtSn alloy films at room temperature

The spin Hall effect of Bi-Sb alloys driven by thermally excited Dirac-like electrons

Magnetic Coupling in Y3Fe5O12/Gd3Fe5

Y3Fe5O12 Spin Pumping for Quantitative Understanding of Pure Spin Transport and Spin Hall Effect in a Broad Range of Materials

Impact of interfacial chemical state on spin pumping and inverse spin Hall effect in YIG/Pt hybrids

Highly Efficient Spin-Orbit Torque Switching in Bi2Se3/Fe3GeTe2 van der Waals Heterostructures

High spin Hall angle in BiSb topological insulator and perpendicularly magnetized CoFeB/MgO multilayers with metallic interfacial layers

Scaling of spin Hall angle in 3d, 4d and 5d metals from Y3Fe5O12/metal spin pumping

Spin filtering effect in intrinsic 2D magnetic semiconductor Cr2Ge2Te6

Spintronics: Ionic Modulation of the Interfacial Magnetism in a Bilayer System Comprising a Heavy Metal and a Magnetic Insulator for Voltage‐Tunable Spintronic Devices (adv. Mater. 40/2018)