Introducing Ferroelasticity into 1D Hybrid Lead Halide Semiconductor by Halogen Substitution Strategy.

Meng-Meng Lun,Chang-Yuan Su,Jie Li,Qiang-Qiang Jia,Hai-Feng Lu,Da-Wei Fu,Yi Zhang,Zhi-Xu Zhang

DOI: https://doi.org/10.1002/smll.202303127

IF: 13.3

2023-01-01

Small

Abstract:Organic-inorganic hybrid lead halide perovskites (OLHPs), represented by (CH3NH3)PbI3, are one of the research focus due to their exceptional performance in optoelectronic applications, and ferroelastic domain walls are benign to their charge carrier transport that is confirmed recently. Among them, the 1D OLHPs feature better stability against desorption and moisture, but related 1D ones possessing ferroelasticity are rarely investigated and reported so far. In this work, the 1D ferroelastic semiconductor (N-iodomethyl-N-methyl-morpholinium)PbI3 ((IDMML)PbI3) is prepared successfully by introducing successively halogenate atoms from Cl, Br to I into the organic cation of the prototype (N,N-dimethylmorpholinium)PbI3 ((DMML)PbI3). Notably, (IDMML)PbI3 shows the narrow bandgap energy (approximate to 2.34 eV) according to the ultraviolet-visible absorption spectrum and the theoretical calculation, and possesses the evident photoconductive characteristic with the on/off ratio of current of approximate to 50 under the 405 nm light irradiation. This work provides a new case for the ferroelastic OLHPs and will inspire intriguing research in the field of optoelectronic. The 1D ferroelastic semiconductor (N-iodomethyl-N-methyl-morpholinium)PbI3 ((IDMML)PbI3) is prepared successfully by the halogen substitution strategy. Notably, the experimental results and theoretical calculations confirm consistently that it reveals a narrow bandgap of approximate to 2.34 eV. Moreover, along the direction of 1D face-sharing chains, it manifests the evident photoconductivity with the on/off ratios of current of approximate to 50 under the 405 nm light irradiation. image