Large Effect of Small Zn Doping on the Electric and Magnetic Properties Inlamn1−xznx

Gong Fei,Wei Tong,Shun Tan,Yuheng Zhang

DOI: https://doi.org/10.1103/physrevb.68.174410

2003-01-01

Abstract:The magnetic and transport properties of ${\mathrm{LaMn}}_{1\ensuremath{-}x}{\mathrm{Zn}}_{x}{\mathrm{O}}_{3}$$\phantom{\rule{0ex}{0ex}}(0.01<~x<~0.08)$ were studied. All samples exhibit insulating behavior under 0 T and 6 T field but there is a paramagnetic-ferronagnetic transition and magneto resistance effect around ${T}_{c}.$ We suggest that ${\mathrm{Zn}}^{2+}$ causes the contortion of the ${\mathrm{MnO}}_{6}$ octahedron near it and thus leads to an energy gap which is attributed to the difference between the Jahn-Teller distortions of the ${\mathrm{Mn}}^{3+}$ in noncontorted ${\mathrm{MnO}}_{6}$ octahedron and the one in contorted ${\mathrm{MnO}}_{6}$ octahedron. So the ${e}_{g}$ electron must hop over this energy gap during transportation and the data are fitted well with thermoactivation model. In the infrared spectra and Raman spectra, the intensity of those peaks, which corresponding to the bending vibration mode of the ${\mathrm{MnO}}_{6}$ octahedron in the horizontal plane, increases when the amount of dopant increases. It indicates that with the increase of dopant, the amount of the distorted ${\mathrm{MnO}}_{6}$ octahedron increases too. That confirms our viewpoint above. However, in this system, the little Zn doping causes large effect on the electrical and magnetic properties. That is because there are four but not one ${\mathrm{MnO}}_{6}$ octahedron that are contorted around one ${\mathrm{Zn}}^{2+}$ in the Mn-O plane.