Abstract:The key to protect sensitive information stored in electronic memory devices from disclosure is to develop transient electronic devices that are capable of being destroyed quickly in an emergency. By using a highly water-soluble polythiophene-conjugated polyelectrolyte PTT-NMI+Br- as an active material, which was synthesized by the reaction of poly[thiophene-alt-4,4-bis(6-bromohexyl)-4H-cyclopenta(1,2-b:5,4-b ')dithiophene] with N-methylimidazole, a flexible electronic device, Al/PTT- NMI+Br-/ITO-coated PET (ITO: indium tin oxide; PET: polyethylene terephthalate), is successfully fabricated. This device shows a typical nonvolatile rewritable resistive random access memory (RRAM) effect at a sweep voltage range of +/- 3 V and a history-dependent memristive switching performance at a small sweep voltage range of +/- 1 V. Both the learning/memorizing functions and the synaptic potentiation/depression of biological systems have been emulated. The switching mechanism for the PTT-NMI+Br--based electronic device may be highly associated with ion migration under bias. Once water is added to this device, it will be destructed rapidly within 20 s due to the dissolution of the active layer. This device is not only a typical transient device but can also be used for constructing conventional memristors with long-term stability after electronic packaging. Furthermore, the soluble active layer in the device can be easily recycled from its aqueous solution and reused for fabricating new transient memristors. This work offers a train of new thoughts for designing and constructing a neuromorphic computing system that can be quickly destroyed with water in the near future.

Secure Electronics: Physically Transient Threshold Switching Device Based on Magnesium Oxide for Security Application (small 27/2018)

Physically Transient Memristor Synapse Based on Embedding Magnesium Nanolayer in Oxide for Security Neuromorphic Electronics

Physically Transient Resistive Switching Memory with Material Implication Operation

Solution-Processed Physically Transient Resistive Memory Based on Magnesium Oxide

Fully Physically Transient Volatile Memristor Based on Mg/Magnesium Oxide for Biodegradable Neuromorphic Electronics

Destructive Electronics from Electrochemical-Mechanically Triggered Chemical Dissolution

Physically Transient Memristive Synapse with Short-Term Plasticity Based on Magnesium Oxide

Physically Transient Artificial Neuron Based on Mg/Magnesium Oxide Threshold Switching Memristor

Dissolvable and Biodegradable Resistive Switching Memory Based on Magnesium Oxide

Transient Form of Polyvinyl Alcohol-Based Devices with Configurable Resistive Switching Behavior for Security Neuromorphic Computing

Electrochemically Triggered Degradation Of Silicon Membranes For Smart On-Demand Transient Electronic Devices

Photovoltage Junction Memtransistor for Optoelectronic In-memory Computing

Enhancing the Resistive Switching Performance in a Physically Transient Memristor by Doping MoS<sub>2</sub> Quantum Dots

Transient and Biocompatible Resistive Switching Memory Based on Electrochemically‐Deposited Zinc Oxide

Physically Transient Threshold Switching Devices for Image Compression and Encryption Computing

MXene Quantum Dot/Polymer Hybrid Structures with Tunable Electrical Conductance and Resistive Switching for Nonvolatile Memory Devices

Water-Soluble Polythiophene-Conjugated Polyelectrolyte-Based Memristors for Transient Electronics

Recent progress in physically transient resistive switching memory

Investigation of Physically Transient Resistive Switching Memory Based on GeO2 Thin Films

A Physically Transient Self-Rectifying and Analogue Switching Memristor Synapse

Natural Acidic Polysaccharide‐Based Memristors for Transient Electronics: Highly Controllable Quantized Conductance for Integrated Memory and Nonvolatile Logic Applications (Adv. Mater. 52/2021)