980 Nm Near-Infrared Light-Emitting Diode Using All-Inorganic Perovskite Nanocrystals Doped with Ytterbium Ions

Zhenglan Ye,Taoran Liu,Dan Chen,Yazhou Yang,Jiayi Li,Yaqing Pang,Xiangquan Liu,Yuhua Zuo,Jun Zheng,Zhi Liu,Buwen Cheng
DOI: https://doi.org/10.26599/tst.2022.9010070
2024-01-01
Abstract:All-inorganic perovskite (CsPbX 3 ) nanocrystals (NCs) have recently been widely investigated as versatile solution-processable light-emitting materials. Due to its wide-bandgap nature, the all-inorganic perovskite NC Light-Emitting Diode (LED) is limited to the visible region (400–700 nm). A particularly difficult challenge lies in the practical application of perovskite NCs in the infrared-spectrum region. In this work, a 980 nm NIR all-inorganic perovskite NC LED is demonstrated, which is based on an efficient energy transfer from wide-bandgap materials (CsPbCl 3 NCs) to ytterbium ions (Yb 3+ ) as an NIR emitter doped in perovskite NCs. The optimized CsPbCl 3 NC with 15 mol%Yb 3+ doping concentration has the strongest 980 nm photoluminescence (PL) peak, with a PL quantum yield of 63%. An inverted perovskite NC LED is fabricated with the structure of ITO/PEDOT: PSS/poly-TPD/CsPbCl 3 : 15 mol%Yb 3+ NCs/TPBi/LiF/AI. The LED has an External Quantum Efficiency (EQE) of 0.2%, a Full Width at Half Maximum (FWHM) of 47 nm, and a maximum luminescence of 182 cd/m 2 . The introduction of Yb 3+ doping in perovskite NCs makes it possible to expand its working wavelength to near-infrared band for next-generation light sources and shows potential applications for optoelectronic integration.
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