Boosting STE and Nd3+ NIR Luminescence in Cs2AgInCl6 Double Perovskite via Na+/Bi3+‐Induced Local Structure Engineering
Shilin Jin,He Yuan,Tao Pang,Manjia Zhang,Youwu He,Bin Zhuang,Tianmin Wu,Yuanhui Zheng,Daqin Chen
DOI: https://doi.org/10.1002/adfm.202304577
IF: 19
2023-08-23
Advanced Functional Materials
Abstract:A new type of self‐trapped exciton (STE) and near‐infrared (NIR) emitting Na+/Bi3+‐alloyed Nd3+:Cs2AgInCl6 double perovskite (DP) is proposed. By virtue of the Na+/Bi3+‐induced local structure modification, both STE and NIR emissions are simultaneously boosted via efficient free exciton sensitization, and the absolute Nd3+ NIR photoluminescence quantum yield reaches 30.3%. Currently, lanthanide (Ln3+) doped Pb‐free double perovskites (DPs) suffer from competitive emissions of the self‐trapped exciton (STE) and Ln3+. Herein, a new type of Nd3+‐doped Cs2AgInCl6 DPs with Na+/Bi3+ co‐alloying is developed. Benefiting from Na+/Bi3+‐induced local structural modification, both STE broadband visible luminescence and Nd3+ near‐infrared (NIR) emissions are boosted via free exciton sensitization. Specifically, a total 648‐fold enhancement in emitting intensities compared to the Na+/Bi3+‐free counterpart is realized, with a significantly improved NIR photoluminescence quantum yield (PLQY) from 0.16% to 30.3%. First‐principles density functional theory calculations, Raman spectra, and steady/transient‐state PL spectra verify the modification of local site symmetry, breakdown of parity‐forbidden absorption, and reduction of electron‐phonon coupling via Na+/Bi3+ doping. Finally, a compact vis–NIR broadband light‐emitting diode (LED) is designed by coupling the Na/Bi/Nd: Cs2AgInCl6 DP with a commercial ultraviolet LED chip, which shows promising applications in spectroscopic analyses and multifunctional lighting.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology