High-Performance Photodetector Based on the ReSe2/PtSe2 Van Der Waals Heterojunction

Yi Song,Ming Li,Jiawang Chen,Yuchen Du,Qinggang Qin,Zengyan Du,Fengxia Zou,Xiaofei Ma,Liang Li,Guanghai Li
DOI: https://doi.org/10.1021/acsaelm.3c00220
IF: 4.494
2023-01-01
ACS Applied Electronic Materials
Abstract:Inrecent years, heterojunction photodetectors constructed of two-dimensionalmaterials with no overhanging bonds and lattice mismatches have attractedwide attention due to the advantages of integrating different materials.Here, we report a high-performance photodetector with tunable dualauroral responses based on the semiconductor (ReSe2) andsemimetal (PtSe2) heterojunctions, with a high reversecommutation ratio of 6.2 x 10(4) at room temperature.Under visible light irradiation, the photodetector, with an open circuitvoltage of 0.2 V and a short circuit current of 19 pA, and a highon/off ratio of 5.5 x 10(4), exhibits a clear photovoltaiceffect. At the same time, the photodetector shows a photoelectricresponsivity and detectivity of 153 mA/W and 7.72 x 10(11) Jones, respectively. The photodetector also shows a large widebandoptical detection capability between ultraviolet and near-infraredlight. Our work provides a model to develop future electronic andoptoelectronic multifunctional devices based on a 2D semiconductorand a semimetal van der Waals heterojunction.
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