Chiral and Helical States in Selective-Area Epitaxial Heterostructure

Huimin Sun,Yu Huang,Mengyun He,Yu Fu,Sikang Zheng,Bin Zhang,Chen Wang,Qing Lin He
DOI: https://doi.org/10.1038/s42005-023-01328-4
2023-01-01
Communications Physics
Abstract:The quasi-1D chiral edge states in a quantum anomalous Hall insulator are dissipationless, while the 2D helical surface states in a topological insulator are insensitive to spin-independent scatterings due to the topological protection. Both serve as essential ingredients for topological electronics. Here, we integrate these states into a single device using selective area epitaxy based on the molecular beam epitaxy technique. The chiral edge state comes from the quantum anomalous Hall insulator Cr:(Bi,Sb) 2 Te 3 , while the helical surface state comes from the intrinsic topological insulator (Bi,Sb) 2 Te 3 which only interfaces with a partial edge of the former, forming a selective-area heterostructure. At the heterointerface, the chiral state in Cr:(Bi,Sb) 2 Te 3 is allowed to be scattered into (Bi,Sb) 2 Te 3 so that the incoming current will be redistributed according to the coordination between the chirality and helicity. Our device enables the collaboration between chiral and helical states for low-dissipative transport with tunable current dimension.
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