Abstract:The small gate overvoltage margin is a key reliability concern of the GaN Schottky-type p-gate high electron mobility transistor (GaN SP-HEMT). Current evaluation of gate reliability in GaN SP-HEMTs relies on either the DC bias stress or pulse I-V method, neither of which resembles the gate voltage (VGS) overshoot waveform in practical converters. This work develops a new circuit method to characterize the gate robustness and reliability in GaN SP-HEMTs, which features a resonance-like VGS ringing with pulse width down to 20 ns and an inductive switching concurrently in the drain-source loop. Using this method, the gate's single-pulse failure boundary, i.e., dynamic gate breakdown voltage (BVDYN), is first obtained under the hard switching (HSW) and drain-source grounded (DSG) conditions. The gate's switching lifetime is then tested under the repetitive VGS ringing, and the number of switching cycles to failure (SCTF#) is fitted by Weibull or Lognormal distributions. The SCTF# shows a power law relation with the VGS peak value and little dependence on the switching frequency. More interestingly, the gate's BVDYN and lifetime are both higher in HSW than those in DSG, as well as at higher temperatures. Such findings, as well as the gate degradation behaviors in a prolonged overvoltage stress test, can be explained by the time-dependent Schottky breakdown mechanism. The gate leakage current is found to be the major precursor of gate degradation. At 125 oC and 100 kHz, the VGS limits for a 10-year lifetime are projected to be ∼6 V and ∼10 V under the DSG and HSW conditions, respectively. These results provide a new qualification method and reveal new physical insights for gate reliability and robustness in p-gate GaN HEMTs

Double-Phase Adaptive Neural Network for Condition-Based Monitoring of P-Gan HEMT under Repetitive Short-Circuit Stresses.

Degradation Prediction of GaN HEMTs under Hot-Electron Stress Based on ML-TCAD Approach

PSO-Based Volterra Tensor Network for Predicting Short Circuit Degradation of P-Gan HEMT

Comparative Investigation on the Repetitive Short-Circuit Capability of 100 V Commercial p-GaN Gate Power HEMTs With Different Processing and Structure

Trap Dynamic Detection of GaN HEMT under Repetitive Short Circuit Degradation.

Observation Of Self-Recoverable Gate Degradation In P-Gan Algan/Gan Hemts After Long-Term Forward Gate Stress: The Trapping & Detrapping Dynamics Of Hole/Electron

An Artificial Neural Network Model for Electro-Thermal Effect Affected Hot Carrier Injection Reliability in 14-nm FinFETs

Study of the Short-Circuit Capability and Device Instability of p-GaN Gate HEMTs by Repetitive Short-Circuit Stress

Health State Estimation and Remaining Useful Life Prediction of Power Devices Subject to Noisy and Aperiodic Condition Monitoring

Real Time Conditioning Monitoring of MOSFET using Artificial Neural Network Regression

Heat-Flux-Based Condition Monitoring of Multichip Power Modules Using a Two-Stage Neural Network

Design and Development of P-Gan Gate HEMT with Schottky Source Extension for Improved Short-Circuit Reliability

Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type P-Gan Gate HEMTs

An Aging Small-Signal Model for Degradation Prediction of Microwave Heterojunction Bipolar Transistor S-Parameters Based on Prior Knowledge Neural Network

Recoverable Current Collapse Effect of p-GaN HEMTs Under Short Circuit Stress

On-Chip Concurrent Device Aging Prognosis and Dielectric Failure Detection for GaN Power Devices

Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method

Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate

A Novel Condition Monitoring Method for Full Modes of Package Degradation in High Power Modules Based on Hysteresis Curves of Forward Voltage Drop

Threshold Voltage Stability Enhancing Technology for p-GaN HEMTs Using Hybrid Gate Structure

Short Circuit Capability Characterization and Analysis of P-Gan Gate High-Electron-Mobility Transistors under Single and Repetitive Tests