Human Memory‐Inspired MoS2/BST Ferroelectric Phototransistor with Synchronous Sensory, Short‐Term and Long‐Term Memories
Chao Tan,Haijuan Wu,Zhicheng Lin,Jinxiu Liu,Lei Yang,Libin Gao,Zegao Wang
DOI: https://doi.org/10.1002/adfm.202414186
IF: 19
2024-10-12
Advanced Functional Materials
Abstract:This work reproduces the three memory patterns synchronously with the retention of 60 s, 30 min, and 18 h, respectively, on a Ba0.6Sr0.4TiO3 ferroelectric MoS2 phototransistor, showing the potential of vision perceptual‐like in‐memory sensing and computing ability. The collaborative working mode of different memory patterns–sensory, short‐term, and long‐term memories–in the human brain is significantly efficient and economical. This work reproduces the three memory patterns synchronously with the retention of 60 s, 30 min, and 18 h, respectively, on a Ba0.6Sr0.4TiO3 ferroelectric MoS2 phototransistor, showing the potential of vision perceptual‐like in‐memory sensing and computing ability. It also can be programmed to function as an optical multiply and accumulate (MAC) operator, in‐memory Boolean logic gates, and optical‐electrical cooperative synapses used for artificial neural network (ANN) pattern recognition. In addition, the current on/off ratio, subthreshold swing, and carrier mobility of the device is observed to reach 105, 72 mV dec−1 and 31 cm2 V−1 s−1, respectively. Also, its photodetection range can be extended from visible to near‐infrared by gate tuning. The responsivity and specific detectivity at 400 nm wavelength are 171452 A W−1 and 1.3 × 1014 Jones, respectively, while that at 1100 nm are 605 A W−1 and 3.2 × 1011 Jones, respectively. This work demonstrates that the ferroelectric phototransistor is capable of photodetection, parallel computing, and synaptic plasticity based on various memory patterns, so as to realize the real in‐memory sensing and computing functionality.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology