Epitaxially-Grown Flexible Bimorph of Pmn-Pt/Pzt with Interface-Mediated Ferroelectricity

Rong Chen,Zilian Qi,Yingfei Xiong,Yicheng Li,Xiaodong Zhang,Kun Cao
DOI: https://doi.org/10.2139/ssrn.4232981
2022-01-01
SSRN Electronic Journal
Abstract:Ferroelectric single-crystalline thin-film bimorphs of Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 (PMN-PT) /PbZr 0.52 Ti 0.48 O 3 (PZT) were epitaxially grown on flexible substrate of mica using pulsed laser deposition (PLD). Hetero-epitaxial growth of the bimorph was induced with a thin film of LaNiO 3 (LNO) single crystal, which was deposited on mica substrate through van der Waals epitaxy (VDWE). The LNO thin film also serves as the electrode for the bimorph device. The growth of LNO thin film along the mica [100] orientation adopts a “Stranski-Krastanov” mechanism, i.e., evolution from 2D layered mode to 3D island mode, which is governed by the relaxation of elastic energy between LNO/mica. Compared with the single layers of PMN-PT or PZT, or the bimorph of PZT/PMN-PT, the PMN-PT/PZT bimorph exhibits lower leakage current and better ferroelectric properties, with remnant polarization up to 72 μC/cm 2 . In addition, polarization in PMN-PT/PZT bimorph exhibits excellent resistance against mechanical bending fatigue over 10 8 switching cycles. Such improved performances can be ascribed to spontaneous polarizations enhanced by the residual stress at the PMN-PT/PZT hetero-interface, increased interfacial potential barrier against leakage, as well as suppressed diffusion of Nb or Mg across the interface.
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