Development of Damage and Its Impact on Surface Recombination Velocities in Dry-Etched InP-based Photonic Crystals

Audrey Berrier,Yao Shi,S. Marcinkevičius,Sailing He,S. Anand

2008-01-01

Abstract:Development of damage and its impact on surface recombination velocities in dry-etched InP-based photonic crystals

What problem does this paper attempt to address?

Accumulated Sidewall Damage in Dry Etched Photonic Crystals

A. Berrier,Y. Shi,J. Siegert,S. Marcinkevicius,S. He,S. Anand

DOI: https://doi.org/10.1116/1.3179256

2009-01-01

Abstract:Evidence for accumulated damage is provided by investigating the effect of etch duration on the carrier lifetime of an InGaAsP quantum well (QW) inside the InP-based photonic crystal (PhC) structures. It is found that once the quantum well is etched through, additional etching reduces the carrier lifetimes from 800to70ps. The surface recombination velocity (SRV) at the exposed hole sidewalls is determined from the measured carrier lifetimes of the PhC fields with different lattice parameters. The observed variation in the SRV with etch duration also confirms the presence of accumulated sidewall damage. It increases from 6×103to1.2×105cms−1 as the etching time increases from 3to50min. A geometric model based on sputtering theory and on the evolution of the hole shape is developed to explain the accumulation of sidewall damage. The model is used to estimate the number of impact events from sputtered species reaching the QW sidewalls, and the variation in the accumulated impact events with etch duration is shown to be qualitatively consistent with the experimental observations. Finally, the results suggest a new method for tailoring the carrier lifetimes in PhC membrane structures.
Impact of Dry-Etching Induced Damage in InP-based Photonic Crystals

Audrey Berrier,Yaocheng Shi,Joerg Siegert,Saulius Marcinkevicius,Sailing He,Srinivasan Anand

DOI: https://doi.org/10.1117/12.781231

2008-01-01

Abstract:In this work variations of the carrier lifetime in a GaInAsP/InP quantum well in two-dimensional PhC structures etched by Ar/Cl2 chemically assisted ion beam etching as a function of the processing parameters is investigated. It is shown that the deposition conditions of the SiO2 mask material and its coverage as well as other process steps such as annealing affect the carrier lifetimes. However the impact of patterning the semiconductor on the carrier lifetime is dominant, showing over an order of magnitude reduction. For given PhC lattice parameters, the sidewall damage is shown to be directly related to the measured carrier lifetimes. A simple qualitative model based on sputtering theory and assuming a conical hole-shape development during etching is used to explain the experimental results.
Evidence for Accumulated Sidewall Damage in Dry Etched Photonic Crystals

Audrey Berrier,Sailing He,J. Siegert,S. Marcinkevičius,S. Anand

IF: 4

2008-01-01

Applied Physics Letters

Abstract:Optical devices based on planar lightwave circuit (PLC) technology have the advantages of small size, high reliability, possibility for large scale production, and potential integration with electronics. These devices are widely employed in optical telecommunications, sensing, data storage, imaging, and signal processing. This thesis focuses on some selected PLC based devices, such as power splitters, demultiplexers, triplexers and polarization beam splitters. First, the basic principle of the waveguides and the simulation methods for PLC devices are discussed. A novel effective index method is introduced to reduce a two-dimensional structure to a one-dimensional one, and can be implemented for arbitrarily shaped waveguides. Numerical methods, such as finite-difference mode solver, beam propagation method, finite-difference time-domain method are introduced to analysis the mode profile of the waveguides, and the propagation properties of light in PLC devices. Multimode interference (MMI) couplers are widely used in many PLCs, such as power splitters, ring lasers, optical switches, and wavelength division multiplexers/demultiplexers. In this work, concepts for improving the self-imaging quality of MMI couplers are analyzed and new designs are proposed. A significant improvement in performance together with compact sizes were obtained with taper sections at the input/output of MMI couplers based on SOI, and deeply etched ridges in MMI couplers based on SiO2. A polarization insensitive dual wavelength demultiplexer based on sandwiched MMI waveguides was presented. Novel devices including triplexers and polarization beam splitters were realized by using photonic crystal (PhC) structures. Two stages of directional couplers based on PhC waveguides are cascaded to form an ultracompact triplexer. The special decoupling property of the PhC waveguide based directional coupler was utilized in the design. A novel polarization beam splitter was realized by combining a MMI coupler and a PhC which works as a polarization sensitive reflector. Finally, fabrication and optical characterization of an ultra-compact directional coupler and PhC structures in InP are presented. In a single etching step, by using the lag-effect in inductively coupled plasma reactive ion etching, a compact directional coupler (55 μm) is demonstrated. Carrier life times in PhC structures etched by chemically assisted ion beam etching were investigated, for emitter and switching applications.
Investigation of ICP Etching Damage of InAsP/InP Strained Multiple Quantum Wells

Meng Cao,Huizhen Wu,Yanfeng Lao,Zhanchao Huang,Cheng Liu,Jun Zhang,Shan Jiang

DOI: https://doi.org/10.3969/j.issn.1674-4926.2006.01.035

2006-01-01

Abstract:To investigate the ICP etching damage to InAsP/InP strained multiple quantum wells, specially designed InAsP/InP strained multiple quantum wells (SMQWs) are grown using gas source molecular beam epitaxy and etched by an inductively coupled plasma. The depth of damage in the SMQW structure is about 40 nm after etching for 75 nm. This is determined by measuring the photo-luminescence spectra of the sample before and after etching. This result is in good agreement with the theoretical damage depth of 43.5 nm by M. Rahman's model. It is found that the defects are mainly caused by ion channeling.
Plasma etching of III-V semiconductors and mechanism of crystalline damage

Huizhen Wu,Meng Cao,YanFeng Lao,Cheng Liu,Zhengsheng Xie,Chunfang Cao

2006-01-01

Abstract:Multiple quantum wells of InGaN/AlGaN, InAsP/InP and single quantum well of InAsP/InGaAsP were studied by inductively coupled plasma etching. Photoluminescence (PL) characterization shows that short-period etching results significant enhancement of PL intensity of quantum wells. The underlying mechanism of PL enhancement is the surface roughening and the microstructure change of QWs resulted from the Ar ion channeling. The Former helps the escape of photons emitted from QWs, while latter is resulted from the crystalline changing by Ar+ tunnelling. As etching period increases the crystal damage becomes significant and luminescence efficiency gradually decreases.
Plasma etching ofⅢ-Ⅴsemiconductors and mechanism of crystalline damage

WU Hui-zhen,CAO Meng,LAO Yan-feng,LIU Cheng,XIE Zheng-sheng,CAO Chun-fang

2006-01-01

Abstract:Multiple quantum wells of InGaN/AlGaN, InAsP/InP and single quantum well of InAsP/InGaAsP were studied by inductively coupled plasma etching. Photoluminescence (PL) characterization shows that short-period etching results significant enhancement of PL intensity of quantum wells. The underlying mechanism of PL enhancement is the surface roughening and the microstructure change of QWs resulted from the Ar ion channeling. The Former helps the escape of photons emitted from QWs, while latter is resulted from the crystalline changingby Ar+ tunnelling. As etching period increases the crystal damage becomes significant and luminescence efficiency gradually decreases.
Effect of Dry Etching on Light Emission of InAsP/InP SMQWs

Cao Meng,Wu Hui-Zhen,Lu Cheng,Lao Yan-Feng,Huang Zhan-Chao,Xie Zheng-Sheng,Zhang Jun,Jiang Shan

DOI: https://doi.org/10.7498/aps.56.1027

2007-01-01

Abstract:The cap layers of InAsP/InP SMQWs and InAsP/InGaAsP strained single quantum wells (SSQW) are etched to different depths using ICP. The PL intensity of the quantum wells is enhanced by different degrees after dry etching. The quantum well surface becomes rough and the microstructure inside the quantum well is changed during dry etching. The influence of surface roughness to the photoluminescence of quantum well is eliminated by selectively wet etching the InP cap layer of the SSQW. It is attained that after the cap layer is dry etched off about 20 nm the PL intensity of SSQW is enhanced about 1.8 and 1.2 times due to the change in microstructure and the roughening of surface, respectively.
Study on the relationship between the damage of machined surface layer and the dispersion curve of laser-induced surface acoustic wave

Xiaohu Liang,Bin Lin,Zaiwei Liu,Anyao Du

DOI: https://doi.org/10.1016/j.optlastec.2021.107667

2022-04-01

Abstract:Laser-induced surface acoustic wave is a new surface damage detection technology, which uses the transient thermal effect of pulse laser to excite the surface acoustic wave on the sample surface. The damage of machined surface layer will cause the velocity change of laser-induced surface acoustic wave. This phenomenon is introduced into the evaluation of the surface layer damage of silicon wafers in this paper. The three-dimensional propagation model of the single-layer structure is extended to the double-layer structure, and it is proved that the gradient change of the surface layer damage will change the trend of velocity curve. In order to characterize the change of velocity curve, the surface layer damage coefficients are introduced. The cross-sectional transmission electron microscope (TEM) image of the lapped silicon wafer shows that the surface of the silicon wafer after lapping will produce a surface damage layer. The test data of the nanoindenter shows that the modulus of the surface damage layer is lower than that of the bulk material. The modulus estimated by dispersion curve is very close to the data measured by nanoindenter, indicating that the dispersion curve can truly reflect the damage degree of silicon wafer surface layer.

optics,physics, applied
A Study on the Surface Quality and Damage Properties of Single-Crystal Silicon Using Different Post-Treatment Processes

Wei Li,Fangyuan Zha,Bo Fu,Yanglong Li,Jiazhu Duan,Ziyou Zhou

DOI: https://doi.org/10.3390/mi15010145

IF: 3.4

2024-01-18

Micromachines

Abstract:Detecting subsurface defects in optical components has always been challenging. This study utilizes laser scattering and photothermal weak absorption techniques to detect surface and subsurface nano-damage precursors of single-crystal silicon components. Based on laser scattering and photothermal weak absorption techniques, we successfully establish the relationship between damage precursors and laser damage resistance. The photothermal absorption level is used as an important parameter to measure the damage resistance threshold of optical elements. Single-crystal silicon elements are processed and post-processed optimally. This research employs dry etching and wet etching techniques to effectively eliminate damage precursors from optical components. Additionally, detection techniques are utilized to comprehensively characterize these components, resulting in the successful identification of optimal damage precursor removal methods for various polishing types of single-crystal silicon components. Consequently, this method efficiently enhances the damage thresholds of optical components.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Prior-damage Dynamics in a High-Finesse Optical Enhancement Cavity

Huan Wang,Loic Amoudry,Kevin Cassou,Ronic Chiche,Jerome Degallaix,Kevin Dupraz,Wenhui Huang,Aurelien Martens,Christophe Michel,Hugues Monard,Daniele Nutarelli,Laurent Pinard,Chuanxiang Tang,Lixin Yan,Fabian Zomer

DOI: https://doi.org/10.1364/ao.410407

IF: 1.9

2020-01-01

Applied Optics

Abstract:An observation of prior-damage behavior inside a high-finesse optical resonator is reported. Intra-cavity average power drops appeared with magnitude and time scale depending on the power level. Increasing further the incident laser beam power led to irreversible damage of the cavity coupling mirror surface. The origin of this phenomenon is investigated with post mortem mirror surface imaging and analysis of the signals reflected and transmitted by the enhancement cavity. Scattering losses induced by surface deformation due to a hot-spot surface contaminant is found to be most likely the dominant physics process behind this phenomenon.
Study of an Epitaxial Regrowth Process by MOCVD for Photonic-Crystal Surface-Emitting Lasers

Lih-Ren Chen,Kuo-Bin Hong,Kuan-Chih Huang,Cheng-Lin Liu,Wei Lin,Tien-Chang Lu

DOI: https://doi.org/10.1021/acs.cgd.1c00280

2021-05-07

Abstract:We study a metal organic chemical vapor deposition regrowth process for electrically driven photonic-crystal surface-emitting lasers (PCSELs). The photonic-crystal (PC) structure consisting of air voids embedded in semiconductor materials is fabricated on the topmost p-GaAs layer of a base-epitaxial wafer followed by the regrowth of a p-Al0.45GaAs layer and a p+-GaAs contact layer, consecutively. The effect of both ex situ and in situ surface treatment before regrowth processes together with the regrowth parameters are investigated. The O2 plasma treatment, one of the ex situ treatment process steps, is found to be critical for the surface condition. A flat surface with retained air voids is obtained with proper surface treatment and epitaxial growth condition, and the electrically pumped PCSELs are successfully demonstrated. Moreover, the optimized regrowth condition is also applicable to various PC topologies to enhance the optical output performance.This article has not yet been cited by other publications.

chemistry, multidisciplinary,materials science,crystallography
Dynamic behavior modeling of laser-induced damage initiated by surface defects on KDP crystals under nanosecond laser irradiation

Hao Yang,Jian Cheng,Zhichao Liu,Qi Liu,Linjie Zhao,Jian Wang,Mingjun Chen

DOI: https://doi.org/10.1038/s41598-019-57300-2

IF: 4.6

2020-01-16

Scientific Reports

Abstract:Abstract The issue of laser-induced damage of transparent dielectric optics has severely limited the development of high-power laser systems. Exploring the transient dynamic behaviors of laser damage on KDP surface by developing multi-physics coupling dynamics model is an important way to reveal the mechanism of nanosecond laser damage. In this work, KDP crystals are taken as an example to explore the mechanism of laser-induced surface damage. Based on the theories of electromagnetic field, heat conduction and fluid dynamics, a multi-physics coupling dynamics model is established for describing the evolution of nanosecond damage processes. The dynamics of laser energy transmission, thermal field distribution and damage morphology during nanosecond laser irradiation are simulated with this model. It is found that the enhancement of light intensity caused by surface defect plays an important role in the initial energy deposition and damage initiation of the laser irradiation area. The evolution of temperature field and crater morphology during subsequent laser irradiation is helpful to understand the laser damage process. The feasibility of this model is verified by the morphology information of typical defect-induced laser damage. This work provides further insights in explaining the laser-induced damage by surface defects on KDP crystals. The model can be also applied to investigate the laser damage mechanisms of other transparent dielectric optics.

multidisciplinary sciences
Characterization of manufacturing-induced surface scratches and their effect on laser damage resistance performance of diamond fly-cut KDP crystal

Jian Cheng,Hao Yang,Qi Liu,Linjie Zhao,Zhichao Liu,Henan Liu,Tingzhang Wang,Yong Xiao,Kehui Hu,Mingjun Chen,Jiubin Tan

DOI: https://doi.org/10.1016/j.rinp.2019.102753

IF: 4.565

2019-12-01

Results in Physics

Abstract:Manufacturing-induced defects have drawn more and more attentions to improve the laser damage resistance performance of KDP crystal applied in high-power laser systems. Here, the morphology of surface scratches on diamond fly-cut KDP crystal is characterized and their effect on the laser damage resistance is theoretically and experimentally investigated. The results indicate that surface scratches could lower laser-induced damage threshold (LIDT) by modulating incident lasers and producing resultant local light intensifications. The induced maximum light intensity enhancement factors (LIEFs) are dependent on scratch shapes and dimensions. The diffraction effects originating from scratch edges are responsible for the strongest light intensification. Even for ultra-precision finished KDP surface with scratches that well satisfy the currently applied scratch/dig specification, the induced LIEFs are quite high, indicating that the actual defect dimension allowance should be amended and specified according to the defect-induced LIEFs. The effect of scratches on laser damage resistance is experimentally verified by the tested LIDT, which is approximately consistent with the simulation one. The morphologies of laser damage sites further confirm the role of scratches in lowering LIDT. This work could offer new perspective and guidance for fully evaluating the performance of ultra-precision manufactured optical materials applied in high-power laser facilities.

physics, multidisciplinary,materials science
Application of light diffraction theory to qualify the downstream light field modulation property of mitigated KDP crystals

Hao Yang,Jian Cheng,Zhichao Liu,Qi Liu,Linjie Zhao,Chao Tan,Jian Wang,Mingjun Chen

DOI: https://doi.org/10.1016/j.optlastec.2020.106873

2021-06-01

Abstract:Micro-milling can effectively remove laser damage sites on a KDP (potassium dihydrogen phosphate) surface and then improve the laser damage resistance of the components. However, the repaired KDP interfaces could cause light propagating turbulence and downstream light intensification with the potential risk to damage downstream optics. In order to analyze the downstream light field modulation caused by Gaussian mitigation pits on KDP crystals, a computational model of the downstream light diffraction based on the angular spectrum theory and the Gaussian repair contour is established. The results show that the phase offset caused by the repaired surface produces a large light field modulation near the rear KDP surface. The modulation generated in the whole downstream light field is greater than that caused by the amplitude change. Therefore, the phase characteristics of the outgoing light could be suggested as a vital research topic for future research on the downstream light field modulation caused by mitigation contours. Significantly, the experimental results on the downstream light intensity distribution have good agreement with the simulation ones, which proves the validity of the established downstream light diffraction model. The phase characterization of the outgoing light is proposed as an evaluation tool in the repair of KDP crystals. The developed analytical method and numerical discrete algorithm could be also applicable in qualifying the repair quality of other optical components applied in high-power laser systems.

optics,physics, applied
Particle simulation of the laser-induced damage on the KDP crystal optical surface under intense laser irradiation

Jian Cheng,Dinghuai Yang,Li Lai,Linjie Zhao,Mingjun Chen,Henan Liu,Jinghe Wang,Chengshun Han,Zican Yang,Hongqin Lei,Tianhao Zhang,Yazhou Sun

DOI: https://doi.org/10.1016/j.optlastec.2024.111238

IF: 4.939

2024-12-01

Optics & Laser Technology

Abstract:The laser-induced damage on KDP crystal optical surfaces under intense laser irradiation significantly limits the energy outputs of the high-power laser systems in many regions. The energy deposition in the non-heat stage of the laser-induced damage process is regarded as the main energy source, directly determining the laser-induced damage thresholds. It can cause severe damage to the optical surfaces under intense laser irradiation and significantly affect the final damage morphology on the optical surface. Nevertheless, there is still no available model that can well reproduce the behaviors of the plasma in the non-heat stage to reveal the internal physical mechanisms of the non-heat stage currently. Hence, a particle-in-cell (PIC) model is proposed to investigate the behaviors of the plasma in the non-heat stage. Afterward, the feature information of the plasma in the non-heat stage on the KDP crystal optical surface without surface defects under intense laser irradiation has been obtained from three aspects: the electron density, the electron phase-space distribution on the subatomic scale, and the electric field distribution at different times. Then two types of typical damage behaviors of particle ejection and the formation of the damaged craters on optical surfaces under intense laser irradiation are studied based on the developed model. Finally, the plasma behaviors in the processes of particle ejection and the formation of the damaged craters are well reproduced and the internal physical mechanisms of these two types of damage behaviors are obtained. To sum up, this work proposes a PIC model to investigate the plasma behaviors in the non-heat stage. Based on this, this work reveals the energy deposition mechanism of the non-heat stage in the process of the laser-induced damage on KDP crystal optical surfaces under intense laser irradiation and obtains the interaction laws between the intense laser and the plasma. Moreover, this work opens a door for the study on the non-heat stage of the laser-induced damage process on the optical surface from the subatomic scale, which is beneficial to the revelation of the internal physical mechanisms in the non-heat stage and the solution of the laser-induced damage issues in high-power laser systems.

optics,physics, applied
Dry etching of epitaxial InGaAs/InAlAs/InAlGaAs structures for fabrication of photonic integrated circuits

Sami Nazib,Troy Hutchins-Delgado,Aadit Sharma,Hosuk Lee,Erum Jamil,Nathan Withers,Thomas Rotter,Sadhvikas Addamane,John Nogan,Anthony James,willard ross,Douglas Pete,Gennady Smolyakov,Ganesh Balakrishnan,Marek Osinski

DOI: https://doi.org/10.1364/ome.506739

2024-01-18

Optical Materials Express

Abstract:Sami A. Nazib, Troy A. Hutchins-Delgado, Aadit Sharma, Hosuk Lee, Erum Jamil, Nathan J. Withers, Thomas J. Rotter, Sadhvikas J. Addamane, John Nogan, Anthony R. James, Willard Ross, Douglas V. Pete, Gennady A. Smolyakov, Ganesh Balakrishnan, Marek Osiński A dry etching process to transfer the pattern of a photonic integrated circuit design for high-speed laser communications is described. The ... [Opt. Mater. Express 14, 328-339 (2024)]

materials science, multidisciplinary,optics
Real-time, in situ probing of gamma radiation damage with packaged integrated photonic chips

Qingyang Du,Jérôme Michon,Bingzhao Li,Derek Kita,Danhao Ma,Haijie Zuo,Shaoliang Yu,Tian Gu,Anuradha Agarwal,Mo Li,Juejun Hu,Jerome Michon

DOI: https://doi.org/10.1364/PRJ.379019

IF: 7.6

2020-02-02

Photonics Research

Abstract:Integrated photonics is poised to become a mainstream solution for high-speed data communications and sensing in harsh radiation environments, such as outer space, high-energy physics facilities, nuclear power plants, and test fusion reactors. Understanding the impact of radiation damage in optical materials and devices is thus a prerequisite to building radiation-hard photonic systems for these applications. In this paper, we report real-time, in situ analysis of radiation damage in integrated photonic devices. The devices, integrated with an optical fiber array package and a baseline-correction temperature sensor, can be remotely interrogated while exposed to ionizing radiation over a long period without compromising their structural and optical integrity. We also introduce a method to deconvolve the radiation damage responses from different constituent materials in a device. The approach was implemented to quantify gamma radiation damage and post-radiation relaxation behavior of SiO2 -cladded SiC photonic devices. Our findings suggest that densification induced by Compton scattering displacement defects is the primary mechanism for the observed index change in SiC. Additionally, post-radiation relaxation in amorphous SiC does not restore the original pre-irradiated structural state of the material. Our results further point to the potential of realizing radiation-hard photonic device designs taking advantage of the opposite signs of radiation-induced index changes in SiC and SiO2 . © 2020 Chinese Laser Press

optics
Surface damage evolution of KDP crystals induced by conical cracks under irradiation of nanosecond laser

Wenyu Ding,Mingjun Chen,Jian Cheng,Hao Yang,Linjie Zhao,Qi Liu,Zhichao Liu,Ding Wenyu

DOI: https://doi.org/10.1117/12.2618820

2021-11-19

Abstract:The potassium dihydrogen phosphate (KDP) crystals suffer from nanosecond pulse laser irradiation and are susceptible to damage during the operation of ICF system. In particular, the microcracks on the surface of KDP crystals caused by the single-point diamond fly-cutting (SPDF) process are more likely to cause serious damage under the subsequent laser irradiation. However, the mechanism of laser damage is still unclear. A model that can well represents the laser damage response is very important to reveal the mechanism of laser-induced damage. In this work, the electromagnetic field, stress field and temperature field are coupled, the mechanical characteristics of KDP material are considered, and the reasonable strength equation is applied to model the laser damage response of KDP crystal. Then, the conical crack is taken as an example to explore the laser damage response process of KDP crystal caused by surface defects under laser irradiation. It is found that the surface conical cracks have a great influence on the response process and the morphological characteristics of the laser damage. The existence of surface conical crack defects would lead to the extension of the longitudinal cracks beneath the damage crater, which has great disadvantages for the repairing of the laser damage sites. This work is of great guidance for avoiding the defects-induced damage and improving the service life of the crystal applied in ICF systems.
Molecular dynamics study of the potential formation thickness of ultrafast laser induced sapphire crystal surface recast layer

Tongwei Liu,Zhiyong Luo

DOI: https://doi.org/10.1016/j.mssp.2024.108307

IF: 4.1

2024-03-14

Materials Science in Semiconductor Processing

Abstract:Currently, laser-induced damage is a prominent focus in the field of ultrafast laser micro/nano processing. This article focused on the potential formation thickness of the ultrafast laser-induced sapphire crystal surface recast layer. To investigate the influence of laser parameters and crystal orientation on the recast layer potential formation thickness at the atomic scale, a molecular dynamics model of laser irradiation sapphire crystal was constructed. Experiments of laser-induced recast layer formation were carried out, and the effects of laser fluence, pulse width, and wavelength on the surface recast layer were analyzed. The results show that the ejected atom start formation time is significantly influenced by pulse width, while the potential formation thickness of the recast layer is mainly influenced by the deposited laser energy. Moreover, under the same laser energy, the damage extent in sapphire crystal caused by laser irradiation along the (0001) orientation is significantly weaker compared to irradiation along the (1–100) and (11–20) orientations. This article could provide theoretical and process references for suppressing the ultrafast laser-induced sapphire crystal surface recast layer formation.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Direct Observation of Iso-Frequency Contour of Surface Modes in Defective Photonic Crystals in Real Space

Lei Shi,Haiwei Yin,Xiaolong Zhu,Xiaohan Liu,Jian Zi

DOI: https://doi.org/10.1063/1.3524520

IF: 4

2010-01-01

Applied Physics Letters

Abstract:Direct observation of iso-frequency contours of surface modes in defective photonic crystals in real space is demonstrated in a hybrid photonic and plasmonic crystals structure with inevitable defects. The scattering process of by the randomly dispersed defects in periodic structure is analytically discussed and used to explain the reason why defects can induce direct observation of iso-frequency contour in real space. The band-structures are also obtained from the observed iso-frequency contours. The findings in this work can be useful to comprehensively characterize photonic crystals.

Development of Damage and Its Impact on Surface Recombination Velocities in Dry-Etched InP-based Photonic Crystals

Accumulated Sidewall Damage in Dry Etched Photonic Crystals

Impact of Dry-Etching Induced Damage in InP-based Photonic Crystals

Evidence for Accumulated Sidewall Damage in Dry Etched Photonic Crystals

Investigation of ICP Etching Damage of InAsP/InP Strained Multiple Quantum Wells

Plasma etching of III-V semiconductors and mechanism of crystalline damage

Plasma etching ofⅢ-Ⅴsemiconductors and mechanism of crystalline damage

Effect of Dry Etching on Light Emission of InAsP/InP SMQWs

Study on the relationship between the damage of machined surface layer and the dispersion curve of laser-induced surface acoustic wave

A Study on the Surface Quality and Damage Properties of Single-Crystal Silicon Using Different Post-Treatment Processes

Prior-damage Dynamics in a High-Finesse Optical Enhancement Cavity

Study of an Epitaxial Regrowth Process by MOCVD for Photonic-Crystal Surface-Emitting Lasers

Dynamic behavior modeling of laser-induced damage initiated by surface defects on KDP crystals under nanosecond laser irradiation

Characterization of manufacturing-induced surface scratches and their effect on laser damage resistance performance of diamond fly-cut KDP crystal

Application of light diffraction theory to qualify the downstream light field modulation property of mitigated KDP crystals

Particle simulation of the laser-induced damage on the KDP crystal optical surface under intense laser irradiation

Dry etching of epitaxial InGaAs/InAlAs/InAlGaAs structures for fabrication of photonic integrated circuits

Real-time, in situ probing of gamma radiation damage with packaged integrated photonic chips

Surface damage evolution of KDP crystals induced by conical cracks under irradiation of nanosecond laser

Molecular dynamics study of the potential formation thickness of ultrafast laser induced sapphire crystal surface recast layer

Direct Observation of Iso-Frequency Contour of Surface Modes in Defective Photonic Crystals in Real Space