Abstract:The quest for higher modulation speed and lower energy consumption has inevitably promoted the rapid development of semiconductor-based solid lighting devices in recent years. GaN-based light-emitting diodes (LEDs) have emerged as promising candidates for achieving high efficiency and high intensity, and have received increasing attention among many researchers in this field. In this paper, we use a self-assembled array-patterned mask to fabricate InGaN/GaN multi-quantum well (MQW) LEDs with the intention of enhancing the light-emitting efficiency. By utilizing inductively coupled plasma etching with a self-assembled Ni cluster as the mask, nanopillar arrays are formed on the surface of the InGaN/GaN MQWs. We then observe the structure of the nanopillars and find that the V-defects on the surface of the conventional structure and the negative effects of threading dislocation are effectively reduced. Simultaneously, we make a comparison of the photoluminescence (PL) spectrum between the conventional structure and the nanopillar arrays, achieved under an experimental set-up with an excitation wavelength of 325 mm. The analysis demonstrates that MQW-LEDs with nanopillar arrays achieve a PL intensity 2.7 times that of conventional LEDs. In response to the PL spectrum, some reasons are proposed for the enhancement in the light-emitting efficiency as follows: 1) the improvement in crystal quality, namely the reduction in V-defects; 2) the roughened surface effect on the expansion of the critical angle and the attenuated total reflection; and 3) the enhancement of the light-extraction efficiency due to forward scattering by surface plasmon polariton modes in Ni particles deposited above the p-type GaN layer at the top of the nanopillars.

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Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p -AlGaN Electron Blocking Layers

Impact of surface recombination on the performance of phosphor-free InGaN/GaN nanowire white light emitting diodes

Axial GaN Nanowire‐Based LEDs

Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "negative" Thermal Activation Energy.

Device Simulation on GaN‐LED Operating in Noncarrier Injection Mode for Performance Improvement by Enhancing the Tunneling Effect in Multiquantum Wells

Understanding the p-Type GaN Nanocrystals on InGaN Nanowire Heterostructures

The Effect of Nanometer‐Scale V‐Pit Layer on the Carrier Recombination Mechanisms and Efficiency Droop of GaN‐Based Green Light‐Emitting Diodes

Comparative analysis of selective area grown Ga- and N-polar InGaN/GaN nanowires for quantum emitters

The Enhancement of Light-Emitting Efficiency Using GaN-based Multiple Quantum Well Light-Emitting Diodes with Nanopillar Arrays

Influence of In content in InGaN barriers on crystalline quality and carrier transport of GaN-based light-emitting diodes

Influence of Thickness of p-InGaN Layer on the Device Physics and Material Qualities of GaN-Based LEDs With p-GaN/ InGaN Heterojunction

Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core–Shell Structure

InGaN/GaN multi-quantum-well nanowires and light emitting

Fabrication and Luminescent Property of GaN Based Light-emitting Diodes with Array Nanorods Structure

Fabrication and Investigation of InGaN/GaN Multi-quantum-well Nanowire Light Emitting Diode

Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density

High efficiency InGaN nanowire tunnel junction green micro-LEDs

Study on Carrier Transportation in InGaN Based Green LEDs with V-pits Structure in the Active Region

Effect of P–n Junction Location on Characteristics of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes