Abstract:With the continuous development of silicon-based optoelectronic chips, their high-power applications in communication, ranging, and other fields are gradually increasing. However, the nonlinear effects of silicon (Si) cause significant output power loss when the input optical power surpasses a certain threshold. This nonlinear relationship between the input optical power and the chip's output power reduces its working performance. Therefore, the importance of regulating the nonlinear phenomena of the chip gradually becomes prominent. In this regard, Sb2Se3 is an excellent material. We propose a scheme to improve the nonlinear power threshold by depositing crystalline Sb2Se3 (c-Sb2Se3) on the top of Si waveguides. Noted that optical loss caused by nonlinear absorption can be depressed by the c-Sb2Se3 film, as well as loss compensation is proportional to the length of the c-Sb2Se3 film deposited. This article theoretically analyzes the characteristics of Sb2Se3, which material can compensate for the nonlinear effect of Si during high-power operation of Si chips. This compensation increases the optical power threshold of nonlinear excitation and is nonvolatile. C-Sb2Se3 films with different lengths (from 15 μm to 60 μm) were deposited on Si waveguides and Si microring resonators with different coupling gap (from 0.2 μm to 0.35 μm) respectively. The results demonstrate a significant improvement in the device's optical nonlinear power threshold. Furthermore, as the length of the c-Sb2Se3 film increases, the optical nonlinear power threshold increases more significantly.

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