Quantum tunneling high-speed nano-excitonic modulator
Hyeongwoo Lee,Sujeong Kim,Seonhye Eom,Gangseon Ji,Soo Ho Choi,Huitae Joo,Jinhyuk Bae,Ki Kang Kim,Vasily Kravtsov,Hyeong-Ryeol Park,Kyoung-Duck Park
DOI: https://doi.org/10.1038/s41467-024-52813-5
IF: 16.6
2024-10-10
Nature Communications
Abstract:High-speed electrical control of nano-optoelectronic properties in two-dimensional semiconductors is a building block for the development of excitonic devices, allowing the seamless integration of nano-electronics and -photonics. Here, we demonstrate a high-speed electrical modulation of nanoscale exciton behaviors in a MoS 2 monolayer at room temperature through a quantum tunneling nanoplasmonic cavity. Electrical control of tunneling electrons between Au tip and MoS 2 monolayer facilitates the dynamic switching of neutral exciton- and trion-dominant states at the nanoscale. Through tip-induced spectroscopic analysis, we locally characterize the modified recombination dynamics, resulting in a significant change in the photoluminescence quantum yield. Furthermore, by obtaining a time-resolved second-order correlation function, we demonstrate that this electrically-driven nanoscale exciton-trion interconversion achieves a modulation frequency of up to 8 MHz. Our approach provides a versatile platform for dynamically manipulating nano-optoelectronic properties in the form of transformable excitonic quasiparticles, including valley polarization, recombination, and transport dynamics.
multidisciplinary sciences