Abstract:Topological insulators (TIs) have shown promise as a spin-generating layer to switch the magnetization state of ferromagnets via spin-orbit torque (SOT) due to charge-to-spin conversion efficiency of the TI surface states that arises from spin-momentum locking. However, when TIs are interfaced with conventional bulk ferromagnetic metals, the combination of charge transfer and hybridization can potentially destroy the spin texture and hamper the possibility of accessing the TI surface states. Here, we fabricate an all van der Waals (vdW) heterostructure consisting of molecular beam epitaxy grown bulk-insulating Bi2Se3 and exfoliated 2D metallic ferromagnet Fe3GeTe2 (FGT) with perpendicular anisotropy. By detecting the magnetization state of the FGT via anomalous Hall effect and magneto-optical Kerr effect measurements, we determine the critical switching current density for magnetization switching to be Jc ≈ 1.2 × 106 A/cm2, the lowest reported for the switching of a perpendicular anisotropy ferromagnet using Bi2Se3. From second harmonic Hall measurements, we further determine the SOT efficiency (ξDL) to be in the range of 1.8 ± 0.3 and 1.4 ± 0.08 between 5 and 150 K, comparable to the highest values reported for Bi2Se3. Our density functional theory calculations find that the weak interlayer interactions at the Bi2Se3/FGT interface lead to a weakened dipole at the interface and suppress the proximity induced magnetic moment on Bi2Se3. This enables direct access to the TI surface states contributed by the first quintuple layer, where the spins are singly degenerate with significant net in-plane spin polarization. Our results highlight the clear advantage of all-vdW heterostructures with weak interlayer interactions that can enhance SOT efficiency and minimize critical current density, an important step toward realizing next generation low-power nonvolatile memory and spintronic devices.

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The Giant Inverse Spin Hall Effect in Semiconductor Alloy/Ferromagnetic Insulator (Ge 1– x Bi x /YIG) Spin Heterojunction

The Giant Inverse Spin Hall Effect in Semiconductor Alloy/Ferromagnetic Insulator (ge1–xbix/yig) Spin Heterojunction

Spin pumping and laser modulated inverse spin Hall effect in yttrium iron garnet/germanium heterojunctions

Highly Efficient Spin-Orbit Torque Switching in Bi2Se3/Fe3GeTe2 van der Waals Heterostructures

Anomalous and inverse spin Hall effects in Pt1-xBix/(YLuBiCa)3(FeGa)5O12 heterojunction

Strongly exchange-coupled and surface-state-modulated magnetization dynamics in Bi2Se3/YIG heterostructures

Growth-Controlled Engineering of Magnetic Exchange Interactions in Single Crystalline GaCoZnO1-v Epitaxial Films with High Co Concentration

Probing exchange bias at the surface of a doped ferrimagnetic insulator

Strong magnon-magnon coupling in an ultralow damping all-magnetic-insulator heterostructure

Nanoengineering of an Si/MnGe Quantum Dot Superlattice for High Curie-temperature Ferromagnetism.

Magnetic switching driven by spin–orbit torque in topological-insulator-based (Bi0.5Sb0.5)2Te3/Ta/CoFe/Cu/CoFe/IrMn heterostructure

Magnetization Switching Through Giant Spin–orbit Torque in a Magnetically Doped Topological Insulator Heterostructure

Electric-field Controlled Ferromagnetism in MnGe Magnetic Quantum Dots.

Excellent spin diode and spin-dependent Seebeck effects in hetero-junctions based on ferromagnetic Cr 3 M 4 (M = Se, Te)

Room-temperature Electric-Field Controlled Ferromagnetism in Mn0.05Ge0.95 Quantum Dots.

Dirac Surface State-Modulated Spin Dynamics in a Ferrimagnetic Insulator at Room Temperature

Nonvolatile Ferroelectric Control of Electronic Properties of Bi 2 Te 3

Magnetization switching induced by magnetic field and electric current in perpendicular TbIG/Pt bilayers

Spin Transport Characteristics Modulated by the GeBi Interlayer in Y3Fe5O12/GeBi/Pt Heterostructures

Microstructure and Ferromagnetism of Mn0.05Ge0.95 Quantum Dots/Graphene Heterostructures for Spintronic Devices