Abstract:The realization of electrospinning‐derived oxide nanofiber‐based transistors composed of In2O3 and ZnO has been reported. By controlling the doping level in nanofibers, significant enhancement in both the electron mobility and thin‐film transistor (TFT) stress stability have been demonstrated. Current findings elucidate the significant advance of electrospinning‐derived oxide nanofiber‐based transistors toward practical applications for future low‐cost and high‐performance electronics. Although In2O3 nanofibers (NFs) are regarded as one of the active channel materials for next‐generation, low‐cost thin‐film transistors (TFTs), these NFs‐based devices still suffer from the degraded carrier mobility and operational instability, limiting the ability of such devices to replace current polycrystalline silicon technologies. Here, it is shown that nanofiber channel transistors with high electron mobility and operational stability can be achieved by selectively doping Zn element into electrospun In2O3 NFs. By precisely manipulating the doping level during NFs fabrication, their crystallinity, surface morphology, and corresponding device performance can be regulated reliably for enhanced transistor performances. It has been detected that InZnO/SiO2 TFTs with an optimized Zn doping concentration of 50% have demonstrated the high field‐effect mobility (μFE) of 6.38 cm2 V−1 s−1, the larger ION/IOFF of 4.12 × 107 and operation in the energy‐efficient enhancement‐mode. Low frequency noise (LFN) measurements have displayed that the scattering and defects inside the NFs are effectively suppressed by the particular microstructure. When integrating ALD‐derived Al2O3 films as the gate dielectric into TFTs devices, their electron mobility and ION/IOFF can be further improved to 37.82 cm2 V−1 s−1 and 2.92 × 108, respectively. To demonstrate the potential toward more complex logic applications, a low voltage resistor‐loaded unipolar inverter is built by using InZnO/Al2O3 TFT, exhibiting a high gain of 20.95 and full swing characteristics. These optimized parameters have demonstrated the significant advance of this electrospinning technique toward practical applications for high performance and large‐scale electronics.

Rational tuning of the cation ratio in metal oxide semiconductor nanofibers for low-power neuromorphic transistors

Carbon Nanotube-Based Flexible Ferroelectric Synaptic Transistors for Neuromorphic Computing

Oxygen Vacancy-Induced Synaptic Plasticity in InAlZnO Nanofiber Transistors for Low-Power Neuromorphic Electronics

Electrospinning‐Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation

Electrospun Nanofiber‐Based Synaptic Transistor with Tunable Plasticity for Neuromorphic Computing

Low-power and high PPF feature synaptic transistors with 3D interface based on SnO2 nanofibers for neuromorphic application

IGZO Nanofiber Photoelectric Neuromorphic Transistors with Indium Ratio Tuned Synaptic Plasticity

In2O3 Nanofiber Neuromorphic Transistors for Reservoir Computing

Ultra-low power IGZO optoelectronic synaptic transistors for neuromorphic computing

A Low-Cost Flexible Optoelectronic Synapse Based on ZnO Nanowires for Neuromorphic Computing

CMOS Compatible Low Power Consumption Ferroelectric Synapse for Neuromorphic Computing

In2O3/ZnO Heterojunction Thin Film Transistor for High Recognition Accuracy Neuromorphic Computing and Optoelectronic Artificial Synapses

Multi-terminal Ionic-Gated Low-Power Silicon Nanowire Synaptic Transistors with Dendritic Functions for Neuromorphic Systems.

IGZO/PVP Composite Nanofiber Neuromorphic Transistors with Optoelectronic Synapse Emulation and Reservoir Computing

Enhanced Artificial Synaptic Properties Enabled by Arrays of Electrolyte-Gated Electrospun InZnO Nanowires

Nitrogen-induced ultralow power switching in flexible ZnO-based memristor for artificial synaptic learning

Artificial synapses based on boron ions-modulated transistors for neuromorphic applications

Optoelectronic Synapses Based on a Triple Cation Perovskite and Al/MoO3 Interface for Neuromorphic Information Processing.

Design-Technology Co-Optimizations for Symmetric Linear Synapse Behaviors in Ferroelectric FET Based Neuromorphic Computing

CMOS-Compatible Fabrication of Low-Power Ferroelectric Tunnel Junction for Neural Network Applications

Structural Engineering of H0.5Z0.5O2‐Based Ferroelectric Tunneling Junction for Fast‐Speed and Low‐Power Artificial Synapses