Heterosynaptic Plasticity Achieved by Highly Anisotropic Ionic Migration in Layered Li <i> <sub>x</sub> </i> MoO <sub>3</sub> for Neuromorphic Application (Adv. Electron. Mater. 11/2022)

Jing‐Kai Qin,Bing‐Xuan Zhu,Cong Wang,Cheng‐Yi Zhu,Ruo‐Yao Sun,Liang Zhen,Yang Chai,Cheng‐Yan Xu
DOI: https://doi.org/10.1002/aelm.202270059
IF: 6.2
2022-01-01
Advanced Electronic Materials
Abstract:Heterosynaptic Plasticity In article number 2200721, Yang Chai, Cheng-Yan Xu, and co-workers report the construction of a planar memristor based on Li+ ion pre-intercalated MoO3 nanosheets. Relying on the local phase transition associated with electric-field-driven in-plane ionic migration, the device demonstrates attractive nonvolatile memory characteristics, which contribute to the simulation of heterogeneous synaptic plasticity required for neurobiological architectures.
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