A fast 2D MoS2 photodetector with ultralow contact resistance
Wangheng Pan,Anran Wang,Xingguang Wu,Xialian Zheng,Hu Chen,Shuchao Qin,Zheng Vitto Han,Siwen Zhao,Rong Zhang,Fengqiu Wang
DOI: https://doi.org/10.1039/d4nr02860k
IF: 6.7
2024-10-27
Nanoscale
Abstract:Two-dimensional (2D) transition metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS 2 ), hold great promise for next-generation nanoelectronic and nanophotonic devices. While high photoresponsivity and broad spectral coverage (UV–IR) have been reported, the slow response time of MoS 2 photodetectors caused by their unfavorable RC characteristics is still a major limit in current devices. Once the RC limit issue is resolved, the intrinsic saturation drift velocity of electrons in TMDs (∼10 6 cm s −1 ) may enable GHz opto-electronic operations. Recent breakthroughs in device fabrication technology have enabled significant progress in exploring the possibilities of high-speed TMD photodetectors. In this work, using semi-metallic bismuth contacts to suppress metal-induced gap states (MIGS), an MoS 2 photodetector with ultra-low contact resistance ( 1 A W −1 ). In particular, using an acousto-optic modulator (AOM)-modulated 532 nm laser, a −3 dB cutoff frequency of ∼70 kHz was obtained, which was corroborated by directly observed rise/fall times (on a scale of 10 μs). An extrinsic effect, where defective states of BN induce a negative shift in the photocurrent baseline was further identified and attributed to charge-induced screening, elucidating where a device can exhibit different dynamic and static response behaviors simultaneously. Our results may shed light for future GHz optoelectronic applications employing TMDs as a platform.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry