Nonlinear Optical Parameters for InSb at 10.6μm Using Microsecond Pulses

A.E. Smith,R.G. McDuff,N.R. Heckenberg,Chun-fei Li

DOI: https://doi.org/10.1364/nlo.1992.md3

1992-01-01

Abstract:A semiconductor material which has been widely studied for its optical properties is Indium Antimonide. It shows a usable optical nonlinearity at room temperature in the 9-11 μm wavelength range of the CO2 laser which is of importance in many applications.

What problem does this paper attempt to address?

Linear and third order nonlinear optical properties of GeSbS chalcogenide integrated waveguides

Samuel Serna,Hongtao Lin,Carlos Alonso-Ramos,Anupama Yadav,Xavier Le Roux,Kathleen Richardson,Eric Cassan,Nicolas Dubreuil,Juejun Hu,Laurent Vivien

DOI: https://doi.org/10.1109/GROUP4.2017.8082220

2017-01-01

Abstract:We report on the linear and nonlinear measurements of GeSbS chalcogenide glasses in waveguide configuration. Single-mode waveguides and ring resonators have been characterized in linear and nonlinear optical regimes around 1.58 μm wavelength demonstrating the interest of using this material for ultrahigh-bandwidth optical communications systems.
Nonlinear Optical Properties of Integrated GeSbS Chalcogenide Waveguides

Samuel Serna,Hongtao Lin,Carlos Alonso-Ramos,Anupama Yadav,Xavier Le Roux,Kathleen Richardson,Eric Cassan,Nicolas Dubreuil,Juejun Hu,Laurent Vivien

DOI: https://doi.org/10.1364/prj.6.000b37

IF: 7.6

2018-01-01

Photonics Research

Abstract:In this paper, we report the experimental characterization of highly nonlinear GeSbS chalcogenide glass waveguides. We used a single-beam characterization protocol that accounts for the magnitude and sign of the real and imaginary parts of the third-order nonlinear susceptibility of integrated Ge23Sb7S70 (GeSbS) chalcogenide glass waveguides in the near-infrared wavelength range at lambda = 1580 nm. We measured a waveguide nonlinear parameter of 7.0 +/- 0.7 W-1.m(-1), which corresponds to a nonlinear refractive index of n(2) = (0.93 +/- 0.08) x 10(-18) m(2)/W, comparable to that of silicon, but with an 80 times lower two-photon absorption coefficient beta(TPA) = (0.010 +/- 0.003) cm/GW, accompanied with linear propagation losses as low as 0.5 dB/cm. The outstanding linear and nonlinear properties of GeSbS, with a measured nonlinear figure of merit FOMTPA = 6.0 +/- 1.4 at lambda = 1580 nm, ultimately make it one of the most promising integrated platforms for the realization of nonlinear functionalities. (C) 2018 Chinese Laser Press.
Optical Nonlinearities of InN by Reflection Z-scan Technique

Jiping Jia,Yong Yang,Yunyi Yang,Zhengguo Xiao,Fang Yu,Yinglin Song

DOI: https://doi.org/10.1117/12.2073046

2014-01-01

Abstract:The optical nonlinearities of semiconductor bulk material Indium nitride (InN) have been investigated by Reflection Z-scan technique (RZ-scan) at the wavelength of 532nm with 21ps laser pulse. Top hat beam is used in order to get high spatial quality. Different from the normal RZ-scan device, instead of moving the sample, the lens before the sample is moved along z-axis. This can guarantee the stability of the spot on the surface of the sample and the measurement accuracy. The measurement of nonlinear refraction without aperture should be tested first, and then with a small aperture nonlinear absorption coefficient is measured. The experimental results show that InN has positive nonlinear refraction and saturable absorption effect. Nonlinear refraction and absorption coefficient are obtained by fitting theoretical simulation with experimental data.
Nonlinear optical properties of 6H-SiC and 4H-SiC in an extensive spectral range

Xiao Guo,Zeyu Peng,Pengbo Ding,Long Li,Xinyi Chen,Haoyun Wei,Zhen Tong,Liang Guo

DOI: https://doi.org/10.1364/OME.415915

2021-01-01

Optical Materials Express

Abstract:Silicon carbide (SiC), which is the leading representative of the third-generation of semiconductors, possesses many excellent physical properties. However, its advantages also incur difficulties in processing, which calls for special processing techniques, such as femtosecond laser machining. In addition, SiC has shown unprecedented potential for optoelectronic applications. Knowledge of the nonlinear absorption coefficient and the nonlinear refractive index coefficient of SiC is required in both of the fields. In this work, the nonlinear absorption coefficient and the nonlinear refractive index coefficient of semi-insulating (SI) 6H-SiC and SI 4H-SiC, the most pervasive SiC polytypes, are measured in an extensive spectral range from 400 nm to 1000 nm with the Z-scan technique. Besides, the spectral dependence of the nonlinear optical properties is analyzed, facilitated by linear absorption spectrum. Especially, two-photon absorption (2PA) and three-photon absorption (3PA) coefficients of SI 6H-SiC and SI 4H-SiC are characterized in the respective spectral ranges. From the characterization of SiC, we can observe self-focusing phenomenon for nonlinear refraction. In the end, we unravel the potential of SiC for ultrafast all-optical switching based on the measured nonlinear optical properties.
Optical, vibrational, thermal, electrical, damage and phase-matching properties of lithium thioindate

S. Fossier,S. Salaun,J. Mangin,O. Bidault,I. Thenot,J.-J. Zondy,W. Chen,F. Rotermund,V. Petrov,P. Petrov,J. Henningsen,A. Yelisseyev,L. Isaenko,S. Lobanov,O. Balachninaite,G. Slekys,V. Sirutkaitis

DOI: https://doi.org/10.1364/JOSAB.21.001981

2004-10-28

Abstract:Lithium thioindate (LiInS$_{2}$) is a new nonlinear chalcogenide biaxial material transparent from 0.4 to 12 $\mu$m, that has been successfully grown in large sizes and good optical quality. We report on new physical properties that are relevant for laser and nonlinear optics applications. With respect to AgGaS(e)$_2$ ternary chalcopyrite materials, LiInS$_{2}$ displays a nearly-isotropic thermal expansion behavior, a 5-times larger thermal conductivity associated with high optical damage thresholds, and an extremely low intensity-dependent absorption allowing direct high-power downconversion from the near-IR to the deep mid-IR. Continuous-wave difference-frequency generation (5-11$ \mu$m) of Ti:sapphire laser sources is reported for the first time.

Optics
InSb-based saturable absorbers for ultrafast photonic applications

Lihui Pang,Rongfeng Wang,Qiyi Zhao,Meng Zhao,Le Jiang,Xiaogang Zhang,Rongqian Wu,Yi Lv,Wenjun Liu

DOI: https://doi.org/10.1039/d3nr01416a

IF: 6.7

2023-07-21

Nanoscale

Abstract:Sb-related III–V compounds have recently gained great research interest owing to their excellent optical and electrical characteristics, which provide many possibilities in photonics and electronics. This study investigated the application of InSb films in ultrafast photonics. An InSb film was fabricated on the tapered zone of a microfiber, and its saturation intensity, modulation depth, and non-saturable loss were determined as 119.8 MW cm −2 , 23.5%, and 27.3%, respectively. The structure of the electronic band and density of states of InSb were theoretically calculated. Notably, mode-locked and Q-switched fiber lasers were realised by incorporating the InSb-microfiber device into two different Er-doped fiber cavities. In the Q-switching state, the narrowest pulse duration was measured as 1.756 μs with a maximum single-pulse energy of 221.95 nJ and a signal-to-noise ratio of 60 dB. In the mode-locking operation, ultrafast lasers with a high signal-to-noise ratio (70 dB), a pulse width as narrow as 265 fs and a repetition rate of 49.51 MHz were acquired. Besides, the second-harmonic mode-locked state was built with an output power of 13.22 mW. In comparison with the reported laser performance with 2D materials as saturable absorbers, the InSb-based mode-locked and Q-switched fiber lasers proposed herein exhibit better comprehensive performance.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Optically Pumped Mid-Infrared Light Emitter on Silicon

L. A. Elizondo,Y. Li,A. Sow,R. Kamana,H. Z. Wu,S. Mukherjee,F. Zhao,Z. Shi,P. J. McCann

DOI: https://doi.org/10.1063/1.2729467

IF: 2.877

2007-01-01

Journal of Applied Physics

Abstract:Characterization of a IV-VI semiconductor structure consisting of a PbSe/PbSrSe multiple quantum well (MQW) active region between distributed Bragg reflectors grown by molecular beam epitaxy on a Si(111) substrate is described. Pulsed photoluminescence (PL) spectra exhibited interband electronic transition energies ranging linearly with temperature from 231.4 meV at 150 K to 299.4 meV at 300 K, while continuous wave (cw) PL spectra exhibited only the vertical optical cavity mode with emission varying between 299.2 meV at 150 K to 301.1 meV at 300 K. A maximum PL emission power of approximately 1.8 mW was obtained for cw diode laser pumping when the heat sink temperature was 200 K. Data are consistent with a localized epilayer heating effect of about 100 deg where the interband electronic transition energy is coincident with the vertical optical cavity mode. In spite of significant sample heating and associated thermal expansion mismatch stress, cw PL emission intensity was stable with no noticeable degradation in intensity after repeated measurements. These results show that IV-VI epitaxial layers on silicon are viable materials for fabricating reliable light emitters for on-chip optical interconnects.
Indium selenide for Q-switched pulse generation in a mid-infrared fiber laser

Tenghui Chen,Zhongjun Li,Chunxiang Zhang,Zhenhong Wang,Mulin Luo,Yuan Zhang,Yachao Wang,Quanlan Xiao,Han Zhang,Jun Liu

DOI: https://doi.org/10.1039/d1tc00727k

IF: 6.4

2021-01-01

Journal of Materials Chemistry C

Abstract:A novel broadband two-dimensional material, indium selenide (InSe), is prepared and characterized in the mid-infrared wavelength region. Stable Q-switching pulses are obtained from a 2.8 μm Er-ZBLAN fiber laser based on the InSe saturable absorber.

materials science, multidisciplinary,physics, applied
Third Nonlinear Optical Properties of Semiconductor Pbs Nanoparticles

BL Yu,YZ Gu,YL Mo,LJ Guo,RS Fu,CS Zhu,FX Gan

DOI: https://doi.org/10.7498/aps.49.324

IF: 0.906

2000-01-01

Acta Physica Sinica

Abstract:The nonlinear optical properties of PbS nanoparticles were studied by the Z-scan technique with 50 ps pulse width, 530 nm and 1060 nm wavelengths from a mode-locked Nd: YAG laser. It is found that the sample shows a saturation absorption at 530 nm, and a two-photon absorption at 1060 nm. The optical limiting properties of PbS nanoparticles at these two wavelengths were also studied.
Optical Properties and Phase-Matching in LiInS_(2)

Yuri Andreev,Pavel Geiko,Anna Shaiduko,Sergey Grechin

2003-01-01

Abstract:Investigation results on linear and non-linear optical properties, damage threshold and potential efficiencies of biaxial negative LiInS_(2) crystal are represented. It shows that the crystal has phase-matching and groupvelocity matching in wide spectral range for second harmonic, sum- and difference-frequency generation of visible, near and middle IR lasers. The possibilities of designing middle IR optical parametric oscillator (OPO) pumped by Nd:YAG and dye lasers and specially possibility of frequency conversion with 3 μm range femtosecond erbium lasers are given.
Indium Selenide Film: a Promising Saturable Absorber in 3- to 4-Μm Band for Mid-Infrared Pulsed Laser

Ting Hai,Guoqiang Xie,Zhen Qiao,Zhipeng Qin,Jie Ma,Yue Sun,Fengqiu Wang,Peng Yuan,Jingui Ma,Liejia Qian

DOI: https://doi.org/10.1515/nanoph-2020-0068

IF: 7.5

2020-01-01

Nanophotonics

Abstract:Indium selenide (InSe) film, an emerging two-dimensional chalcogenide semiconductor, has recently attracted growing interests in optoelectronics. However, its nonlinear characteristics and application potentials in mid-infrared (IR) region remain open, which is a very attractive but undeveloped spectral region currently. In this work, it is demonstrated that InSe film possesses excellent nonlinear absorption properties in 3- to 4-μm band. Saturable absorption measurements of InSe film at 2.8 and 3.5 μm show very low saturation energy fluences and moderate modulation depths. Pump–probe measurements at 3 and 4 μm indicate that InSe film has ultrafast responses in mid-IR region. Furthermore, the application of InSe film in mid-IR pulsed laser is demonstrated, and stable Q-switching operation of fiber laser at 2.8 μm is realized. These results show that InSe film is a promising saturable absorber for mid-IR pulsed laser.
β-In 2 S 3 Nanoplates for Ultrafast Photonics

Xiaohui Li,Yueheng Han,Zhaojiang Shi,Mingqi An,Enci Chen,Jiangjiang Feng,Qi Jie Wang

DOI: https://doi.org/10.1021/acsanm.1c03542

IF: 6.14

2022-03-15

ACS Applied Nano Materials

Abstract:The technological revolution of two-dimensional (2D) materials provides vitality for ultrafast optics. Compared with other 2D materials, indium sulfide (In2S3) has become an attractive candidate material in the field of nonlinear optics because of its high carrier mobility, ultrafast photoelectric sensitivity, medium band gap, and high absorption coefficient. However, its nonlinear optical effects have rarely been studied. In this work, we synthesized 2D β-In2S3 nanoplates using the hydrothermal method. The saturable absorber based on β-In2S3 nanoplates has been investigated. The experimental results demonstrated that the modulation depth and saturable intensity of β-In2S3 are measured as 2.32% and 18.4 MW·cm–2, respectively, which indicates that β-In2S3 has great potential in ultrafast optics among emerging nonlinear optical materials. Using such unprecedented properties, the mode-locked fiber laser with 247th (1.92 GHz) harmonic mode locking is realized in the C-band for the first time to our knowledge. This paves the way for exploring β-In2S3 as an outstanding nonlinear material for high-performance ultrafast optics.This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Linear and Nonlinear Optical-Properties of Semiconductor Particles

P HORAN,W BLAU

DOI: https://doi.org/10.1080/01411599008210246

1990-01-01

Phase Transitions

Abstract:The field of nonlinear optics is briefly introduced, followed by a review of quantum size effects in small semiconductor particles, with special reference to the linear and nonlinear optical properties. Experimental methods, especially the “laser induced grating” technique are described. Semiconductor (CdS x Se1−x ) doped glasses are examined, both the commercially available niters and a specially made experimental CdSe doped glass. Both linear and nonlinear optical properties are discussed. Colloidal and polymers systems are also briefly discussed.
Nonlinear saturable properties of indium selenide film fabricated by molecular beam epitaxy method in near infrared region and Q-switched laser performance for Nd:GdYNbO laser

Xiaotao Yang,Xing Zhang,Tianwen Gao,Tianxu Qiao,Ziyin Jiang,Kehui Wu,Zechang Shi,Chenjie Gu,Rui Zhang,Jiaxiang Zhang,Lan Chen,Xiaotao Yang,Xing Zhang,Tianwen Gao,Tianxu Qiao,Ziyin Jiang,Kehui Wu,Zechang Shi,Chenjie Gu,Rui Zhang,Jiaxiang Zhang,Lan Chen

DOI: https://doi.org/10.1016/j.optlastec.2022.107851

2022-05-01

Abstract:Two-dimensional layered materials have caught considerable attention for their intrinsic value. Much effort has been made to excavate novel 2D materials with more distinctive characteristics as optical modulators. Single-crystal indium selenide (In2Se3) film with few layers fabricated by molecular beam epitaxy method, for the first time, is employed in this study as a saturable absorber for an Nd3+ doped Gd:GdYNbO infrared laser. Our experimental results demonstrate that the high-quality In2Se3 film achieves a desirable modulation depth of 18.4%, but only 5.9% for the LPE one. The shortest pulse duration and maximum single pulse energy of In2Se3 film are both much better than those of MoS2 and WS2 films in the same laser system. It further confirms the distinguishing properties of the MBE-growth In2Se3 film for optical modulation in infrared region.

optics,physics, applied
Impact ionization in InSb probed by THz-pump THz-probe spectroscopy

Matthias C. Hoffmann,Janos Hebling,Harold Y. Hwang,Ka-Lo Yeh,Keith A. Nelson

DOI: https://doi.org/10.48550/arXiv.0812.4754

2008-12-29

Materials Science

Abstract:Picosecond carrier dynamics in indium antimonide (InSb) following excitation by below-bandgap broadband far infrared radiation were investigated at 200 K and 80 K. Using a novel THz-pump/THz-probe scheme with pump THz fields of 100 kV/cm and an intensity of 100 MW/cm^2, we observed carrier heating and impact ionization. The number of carriers produced exceeds 10^16 cm-3, corresponding to a change in carrier density Delta N/N of 700% at 80K. The onset of a well defined absorption peak at 1.2 THz is an indication of changes in LO and LA phonon populations due to cooling of the hot electrons.
Nonlinear Absorption of Bi2S3 and NiS Semiconductor Nano-Particles

Zhang Yundong,Zhu Junjie,Zhang Yunjun,Yuan Ping,Sun Xutao

DOI: https://doi.org/10.3969/j.issn.1674-4926.2005.z1.004

2005-01-01

Chinese Journal of Semiconductors

Abstract:The optical limiting behavior and nonlinear optical response of nanoparticles,Bi2S3 and NiS are measured.Their nonlinear absorption coefficients are β≈9cm/GW and β≈8cm/GW by simulation,respectively.
Optically Tunable Transient Plasmons in InSb Nanowires

Mengfei Xue,Dong Pan,Jianhua Zhao,Jianing Chen

DOI: https://doi.org/10.1002/adma.202208952

IF: 29.4

2023-01-24

Advanced Materials

Abstract:Optical carrier incubation can effectively alter the electron transport properties of semiconductors; thus, optical switching of the plasmonic response of the semiconductor enables the ultrafast manipulation of the light at the nanoscale. Semiconductor nanostructures are promising platforms in on‐chip high‐speed plasmonic devices, owing to their high photoinduced electron injection efficiency at sub‐picosecond and compatibility with contemporary semiconductor technologies. The pure single‐crystalline InSb nanowires are promising plasmonic materials in the mid‐infrared region due to their high electron mobility and small electron effective mass. Here, we utilize the pump‐probe nanoscopy to investigate the pump fluence dependency and the dynamics of the non‐equilibrium plasmons in the InSb nanowires. We successfully switch the InSb plasmon by injecting the photo‐induced electrons and show the practical tuning of the plasmon frequency to one octave by increasing the pump fluence from 0 to 90 μJ/cm2. The density of the photo‐induced electrons in InSb nanowires is 18.8×1018 cm−3 with pump fluence as low as 90 μJ/cm2. The high electron mobility of the InSb supports the low‐loss plasmon with a damping rate of about 200 cm−1. The InSb nanowires' excellent plasmonic properties ensure they are a promising platform for upcoming high‐speed mid‐infrared plasmonic materials for informatic devices. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Femtosecond laser-induced ultrafast electron dynamics and band gap renormalization in InSb

Jingwei Dong,Runze Liu,Fanxiang Meng,Dan Luo,Luca Perfetti,Zhongwei Chen

DOI: https://doi.org/10.1016/j.apsusc.2024.161697

IF: 6.7

2024-11-14

Applied Surface Science

Abstract:Studying ultrafast dynamical processes is essential for understanding light-matter coupling, which is crucial for the optoelectronic and photonic applications of semiconductor materials. Herein, we investigate the evolution of electron population near the conduction band minimum (CBM) and band gap in InSb (100) crystal under different laser fluences using time- and angle-resolved photoelectron spectra (TrARPES). In contrast to the pump-fluence-independent fast growth process (FP) of the electron population, the slow process (SP) is fluence sensitive, which is similar to the temperature-dependent behavior observed in InSb (110). In addition, we observe a band gap enlargement with increasing the photoexcitation flux. Comprehensive analysis reveals that these observed diverse results are attributed to the laser-tunable dielectric function on the surface of InSb. Our findings not only enhance the understanding of laser-semiconductor interactions but also broaden the potential applications in the field of optoelectronic and photonic devices.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Third-Order Nonlinear Optical Susceptibility Of Indium Phosphide Nanocrystals

Wang Hong-Li,Dong Wang,Chen Guang-De,Hui Liu,王红理,王东,陈光德,刘晖

DOI: https://doi.org/10.1088/0256-307X/24/9/038

2007-01-01

Chinese Physics Letters

Abstract:InP nanocrystals synthesized by refluxing and annealing of organic solvent are determined from XRD measurements to have an average granularity of 25nm. The nonlinear optical properties of the InP nanocrystals studied by using laser Z-scan technique with 50ps pulses at 532nm are found to reveal strong nonlinear optical properties and two-photon absorption phenomenon. Also, the nonlinear absorption coefficient, the nonlinear refractive index and the third-order nonlinear optical susceptibility are determined by experiments, in which the nonlinear refractive index is three orders of magnitude larger than that of bulk InP.
Indirect-to-direct band-gap transition in few-layer -InSe as probed by photoluminescence spectroscopy

B. R. Borodin,I. A. Eliseyev,A. I. Galimov,L. V. Kotova,M. V. Durnev,T. V. Shubina,M. A. Yagovkina,M. V. Rakhlin

DOI: https://doi.org/10.1103/physrevmaterials.8.014001

IF: 3.98

2024-01-06

Physical Review Materials

Abstract:InSe is a promising material for next-generation two-dimensional electronic and optical devices, the characteristics of which are largely determined by the type of band structure, direct or indirect. In general, atomic force microscopy and optical methods can be sensitive to peculiarities of the electronic structure, leading to different results. In this work we will focus on the luminescent properties of few-layer β -InSe with a thickness of 6–75 monolayers (MLs). Low-temperature micro-photoluminescence ( μ -PL) studies show a sharp increase in PL intensity in the range of thicknesses from 16 to 20 monolayers, where, in addition, there is a singularity in the dependence of the work function on the thickness. Time-resolved photoluminescence spectroscopy reveals three characteristic PL decay times that differ from each other by about an order of magnitude. We associate the processes underlying the two faster decays with the recombination of electrons and holes between the band extrema, either directly or through the interband relaxation of holes. Their contributions to the total PL intensity increase significantly in the same thickness range, 16–20 MLs. On the contrary, the slowest contribution, which we attribute mainly to the defect-assisted recombination, prevails at a smaller number of monolayers and then noticeably decreases. These results indicate the indirect-to-direct band-gap transition near 16–20 MLs, which determines the range of applicability of few-layer β -InSe for efficient light emitters. https://doi.org/10.1103/PhysRevMaterials.8.014001 ©2024 American Physical Society

materials science, multidisciplinary

Nonlinear Optical Parameters for InSb at 10.6μm Using Microsecond Pulses

Linear and third order nonlinear optical properties of GeSbS chalcogenide integrated waveguides

Nonlinear Optical Properties of Integrated GeSbS Chalcogenide Waveguides

Optical Nonlinearities of InN by Reflection Z-scan Technique

Nonlinear optical properties of 6H-SiC and 4H-SiC in an extensive spectral range

Optical, vibrational, thermal, electrical, damage and phase-matching properties of lithium thioindate

InSb-based saturable absorbers for ultrafast photonic applications

Optically Pumped Mid-Infrared Light Emitter on Silicon

Indium selenide for Q-switched pulse generation in a mid-infrared fiber laser

Third Nonlinear Optical Properties of Semiconductor Pbs Nanoparticles

Optical Properties and Phase-Matching in LiInS_(2)

Indium Selenide Film: a Promising Saturable Absorber in 3- to 4-Μm Band for Mid-Infrared Pulsed Laser

β-In 2 S 3 Nanoplates for Ultrafast Photonics

Linear and Nonlinear Optical-Properties of Semiconductor Particles

Nonlinear saturable properties of indium selenide film fabricated by molecular beam epitaxy method in near infrared region and Q-switched laser performance for Nd:GdYNbO laser

Impact ionization in InSb probed by THz-pump THz-probe spectroscopy

Nonlinear Absorption of Bi2S3 and NiS Semiconductor Nano-Particles

Optically Tunable Transient Plasmons in InSb Nanowires

Femtosecond laser-induced ultrafast electron dynamics and band gap renormalization in InSb

Third-Order Nonlinear Optical Susceptibility Of Indium Phosphide Nanocrystals

Indirect-to-direct band-gap transition in few-layer -InSe as probed by photoluminescence spectroscopy