A Novel Gate-Controlled Lateral Thyristor Based Pixel for Low-Light Image Sensors

Ke-Yang Sun,Li-Yang Pan,Zhe-yao Wang

DOI: https://doi.org/10.1109/icsict55466.2022.9963238

2022-01-01

Abstract:CMOS low light level image sensor is popular research in international imaging devices. Thyristors biased at the switching point have significant amplification factors owing to internal cross-coupled bipolar transistors. However, it is tough to operate thyristors quickly at the switching point to achieve low light detection because of the inherently unstable characteristics. This paper proposes a novel gate-controlled lateral thyristor (GC-LT), which can be operated in the transition region and have a high sensitivity performance in low light. Simulation results show that the trigger time of the photodetector is sensitive to the light intensity ranging from 1×10 -9 to 2.5×10 -6 W/cm 2 . A sampling circuit and a slope following operation scheme are proposed to record and quantify the light-sensitive trigger time. The pixel size of 15×15 μm 2 is designed and simulated using a 0.6-µm 2-poly 3-metal SOI-CMOS process.