Abstract:Since its emergence a decade ago, amorphous silicon flat panel X-ray detector has established itself as a ubiquitous platform for an array of digital radiography modalities. The fundamental building block of a flat panel detector is called a pixel. In all current pixel architectures, sensing, storage, and readout are unanimously kept separate, inevitably compromising resolution by increasing pixel size. To address this issue, we hereby propose a “smart” pixel architecture where the aforementioned three components are combined in a single dual-gate photo thin-film transistor (TFT). In other words, the dual-gate photo TFT itself functions as a sensor, a storage capacitor, and a switch concurrently. Additionally, by harnessing the amplification effect of such a thin-film transistor, we for the first time created a single-transistor active pixel sensor. The proof-of-concept device had a W/L ratio of 250μm/20μm and was fabricated using a simple five-mask photolithography process, where a 130nm transparent ITO was used as the top photo gate, and a 200nm amorphous silicon as the absorbing channel layer. The preliminary results demonstrated that the photocurrent had been increased by four orders of magnitude due to light-induced threshold voltage shift in the sub-threshold region. The device sensitivity could be simply tuned by photo gate bias to specifically target low-level light detection. The dependence of threshold voltage on light illumination indicated that a dynamic range of at least 80dB could be achieved. The smart pixel technology holds tremendous promise for developing high-resolution and low-dose X-ray imaging and may potentially lower the cancer risk imposed by radiation, especially among paediatric patients.

1T Semi-floating Gate Image Sensor with Enhanced Quantum Efficiency and High Response Speed

Double Junction Photodiode for X-Ray Cmos Sensor Ic

Characterization and Optimization of a Single-Transistor Active Pixel Image Sensor with Floating Junction Connected to Floating Gate

Gate Voltage Dependence Ultrahigh Sensitivity WS₂ Avalanche Field-Effect Transistor

Floating Source/Drain Enabled Linear–Linear–Logarithmic Self-Adaptive One-Transistor Active Pixel Sensor

Investigation of Device Physics and Modeling of Semi-Floating Gate Image Sensor Cell

Dual-gate photo thin-film transistor: a “smart” pixel for high- resolution and low-dose X-ray imaging

UTBB-Based Single Transistor Image Sensor of Submicron Pixel Using Back Gate Modulation

A TFT-Based Active Pixel Sensor With Dynamic Range > 100dB, Gain > 10 and Broad Spectral Response From Near-UV to Near-IR, Enabling In-Display Sensor Applications

A Thin-Film Pinned-Photodiode Imager Pixel with Fully Monolithic Fabrication and beyond 1Me- Full Well Capacity

A Novel One-Transistor Active Pixel Sensor with Tunable Sensitivity

Electric-Dipole Gated Two Terminal Phototransistor for Charge-Coupled Device

Gate-tunable High-Performance Broadband Phototransistor Array of Two-Dimensional PtSe2 on SOI

Vertically Integrated Optical Sensor with Photoconductive Gain > 10 and Fill Factor > 70%

A floating gate negative capacitance MoS2 phototransistor with high photosensitivity

3-D Dual-Gate Photosensitive Thin-Film Transistor Architectures Based on Amorphous Silicon

Gate-controlled Gain Tuning of FDSOI-based 1T Pixel for In-Sensor White Balance

Toward low-power-consumption source-gated phototransistor

Investigation of Single-Transistor Active Pixel Image Sensor Compatible with Dual-Poly-Gate Technology

Photovoltage-Coupled Dual-Gate InGaZnO Thin-Film Transistors Operated at the Subthreshold Region for Low-Power Photodetection

Ultrafast and Highly Sensitive Dual-Channel FET Photodetector Based on a Two-Dimensional MoS2 Homojunction.