Abstract:In this paper, a novel design approach is proposed for on-chip bandpass filter (BPF) design with improved passband flatness and stopband suppression. The proposed approach simply uses a combination of meander-line structures with metal–insulator–metal (MIM) capacitors. To demonstrate the insight of this approach, a simplified equivalent LC-circuit model is used for theoretical analysis. Using the analyzed results as a guideline along with a full-wave electromagnetic (EM) simulator, two BPFs are designed and implemented in a standard 0.13- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> (Bi)-CMOS technology. The measured results show that good agreements between EM simulated and measured results are achieved. For the first BPF, the return loss is better than 10 dB from 13.5 to 32 GHz, which indicates a fractional bandwidth (FBW) of more than 78%. In addition, the minimum insertion loss of 2.3 dB is achieved within the frequency range from 17 to 27 GHz and the in-band magnitude ripple is less than 0.1 dB. The chip size of this design, excluding the pads, is 0.148 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . To demonstrate a miniaturized design, a second design example is given. The return loss is better than 10 dB from 17.3 to 35.9 GHz, which indicates an FBW of more than 70%. In addition, the minimum insertion loss of 2.6 dB is achieved within the frequency range from 21.4 to 27.7 GHz and the in-band magnitude ripple is less than 0.1 dB. The chip size of the second design, excluding the pads, is only 0.066 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .

Millimeter-Wave On-Chip Bandpass Filter Using Complementary-Broadside-Coupled Structure

A 0.8/2.4 GHz Tunable Active Band Pass Filter in InP/Si BiCMOS Technology

An On-Chip Ultra-Wideband Bandpass Filter in 0.18-Μm SiGe BiCMOS Technology

A CMOS 1.3-1.7GHz Q-Enhanced LC Band-pass RF Filter with 1.5-67% Tunable Fractional Bandwidth

Microwave On-Chip Bandpass Filter Based on Hybrid Coupling Technique

Design of Millimeter-Wave Bandpass Filter Using Edge-Coupling Dual-Mode Resonator

A Broadband On-Chip Bandpass Filter Using Shunt Dual-Layer Meander-Line Resonators

Integrated Third-Order Millimeter-Wave On-Chip Bandpass Filter Using 0.13-Μm SiGe Bi-CMOS Technology

Compact Millimeter-Wave On-Chip Dual-Band Bandpass Filter in 0.15-Μm GaAs Technology

Miniaturized millimeter-wave dual-band band-pass on-chip filter in 0.13-μm SiGe BiCMOS

Design of Millimeter-Wave Bandpass Filters With Broad Bandwidth in Si-Based Technology

Miniaturized Millimeter-Wave On-Chip Bandpass Filter Design in 0.13-Μm SiGe BiCMOS Technology

Compact Dual‐layer Substrate‐integrated Waveguide Bandpass Filters with Controllable Transmission Zeros

Millimeter-Wave Bandpass Filters Using On-Chip Dual-Mode Resonators in 0.13-Μm SiGe BiCMOS Technology

A 10–50-Ghz UWB BPF with GSG Probe Transition Using Micromachined Rectangular Microcoaxial Line

Design of Ultra-Wideband On-Chip Millimter-Wave Bandpass Filter in 0.13-Μm (Bi)-Cmos Technology.

Design of Wideband Third-Order Bandpass Filters Using Broadside-Coupled Resonators in 0.13-$\Mu$ M (Bi)-Cmos Technology

Compact 13–34 GHz ultrawideband on‐chip bandpass filter using the coupled meandered line

Compact On-Chip Bandpass Filter With Improved In-Band Flatness and Stopband Attenuation in 0.13- $\mu \text{m}$ (Bi)-CMOS Technology

An On-Chip Bandpass Filter Using a Broadside-Coupled Meander Line Resonator With a Defected-Ground Structure

Millimeter-Wave Bandpass Filter Based on Spiral Resonators and DGS Using SiGe BiCMOS Technology.