Abstract:The vertical stacking of various two-dimensional (2D) layered materials to create van der Waals heterostructures (vdWHs) has received great attention as a promising material for developing nanoelectronic and optoelectronic devices. This is because such structures can inherit the unique and favorable properties of a single 2D material. In this study, a SnSe2/MoSe2 vdWH model was built for the first time using the first-principles approach, and its electronic and optical properties were systematically investigated. The results reveal that the SnSe2/MoSe2 vdWH exhibits a type-II heterostructure with a 0.167 eV indirect band gap, which facilitates the separation of photogenerated electron–hole pairs. Notably, the electrical characteristics of the SnSe2/MoSe2 vdWH can be easily controlled by applying an external electric field or biaxial strain. Specifically, a positive electric field or tensile strain narrows the band gap, whereas a negative electric field or compressive strain widens the band gap. The energy band alignment shifts from a type-II to a type-I configuration when a negative electric field of E = −0.6 V Å–1 or a compressive strain of 10% is applied. Furthermore, SnSe2/MoSe2 vdWHs exhibit improved optical absorption across the visible to ultraviolet regions compared to the individual monolayers of SnSe2 and MoSe2. Additionally, the absorption can be influenced by external tension and electric fields. Specifically, under significant compressive strains (10%), the ultraviolet absorption peak reaches 33.5%. Interestingly, a red shift occurs with tensile strain or a negative electric field, whereas a blue shift occurs with compressive strain or a positive electric field. The proposed SnSe2/MoSe2 vdWH in this study offers valuable insights into electronic and optoelectronic device development, particularly in the context of photovoltaic devices, where enhanced ultraviolet absorption can lead to improved light-to-electricity conversion efficiency.

Reconfigurable Band Alignment of SWSe/h-BP Heterostructures for Photoelectric Applications.

Tuning the Band Alignment and Electronic Properties of ${\rm{GaSe}}/{\rm{Sn}}$ X $_{2}$ ( X = ${\rm{S}}$, ${\rm{Se}}$) Two-Dimensional van der Waals Heterojunctions via an Electric Field

Gate controllable band alignment transition in 2D black-arsenic/WSe2 heterostructure

Two-Dimensional Lateral Multiheterostructures Possessing Tunable Band Alignments

Tunable band alignment engineering in two-dimensional Janus SnSSe/phosphorene van der Waals heterostructures

Band Alignment Engineering in Two-Dimensional Lateral Heterostructures

Fast Fabrication of WS<sub>2</sub>/Bi<sub>2</sub>Se<sub>3</sub> Heterostructures for High-Performance Photodetection

Effects of composition modulation on the type of band alignments for Pd2Se3/CsSnBr3 van der waals heterostructure: A transition from type I to type II

The Tunability of Electronic and Transport Properties of InSe/MoSe2 Van Der Waals Heterostructure: A First-Principles Study

Composition Modulation-Mediated Band Alignment Engineering from Type I to Type III in 2D vdW Heterostructures

Tuning electronic and optical properties of BlueP/MoSe2 van der Waals heterostructures by strain and external electric field

Modulation of electronic and optical properties of BlueP/MoSSe heterostructures via biaxial strain and vertical electric field

Strain-Tunable Band Alignment And Band Gap Of Gase/Wte2 Heterojunction For Water Splitting And Light-Emitting

Tunable electronic structures in BP/MoSSe van der Waals heterostructures by external electric field and strain

Theoretical design of BAs/WX 2 (X = S, Se) heterostructures for high-performance photovoltaic applications from DFT calculations

Density Functional Theory Study of the Electronic and Optical Properties of SnSe 2 /MoSe 2 Heterostructures under Strain and Electric Field: Implications for Optoelectronic Devices

Design and manipulation of high-performance photovoltaic systems based on two-dimensional novel KAgSe/KAgX(X=S,Te) van der Waals heterojunctions

3D/2D lead-free halide perovskite CsSnBr 3 /MoX (X = Se 2 , SSe, S 2 ) heterostructures for high-efficiency solar cell: Interface engineering strategies and transition of band alignments

In Situ Formation of SnSe2/SnSe Vertical Heterostructures toward Polarization Selectable Band Alignments

Manipulation of Band Alignment in Two-Dimensional Vertical WSe2/BA2PbI4 Ruddlesden-Popper Perovskite Heterojunctions Via Defect Engineering.

The Electronic and Optical Properties of PC6/WS2 Heterostructure Modulated Via Biaxial Strain and External Electric Field