Abstract:A monolithic silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) image-detecting integrated circuit of the active-pixel-sensor type, now undergoing development, is designed to operate at visible and near-infrared wavelengths and to offer a combination of high quantum efficiency and low diffusion and capacitive cross-talk among pixels. The imager is designed to be especially suitable for astronomical and astrophysical applications. The imager design could also readily be adapted to general scientific, biological, medical, and spectroscopic applications. One of the conditions needed to ensure both high quantum efficiency and low diffusion cross-talk is a relatively high reverse bias potential (between about 20 and about 50 V) on the photodiode in each pixel. Heretofore, a major obstacle to realization of this condition in a monolithic integrated circuit has been posed by the fact that the required high reverse bias on the photodiode is incompatible with metal oxide/semiconductor field-effect transistors (MOSFETs) in the CMOS pixel readout circuitry. In the imager now being developed, the SOI structure is utilized to overcome this obstacle: The handle wafer is retained and the photodiode is formed in the handle wafer. The MOSFETs are formed on the SOI layer, which is separated from the handle wafer by a buried oxide layer. The electrical isolation provided by the buried oxide layer makes it possible to bias the MOSFETs at CMOS-compatible potentials (between 0 and 3 V), while biasing the photodiode at the required higher potential, and enables independent optimization of the sensory and readout portions of the imager.

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Retinomorphic Motion Detector Fabricated with Organic Infrared Semiconductors

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SOI CMOS Imager with Suppression of Cross-Talk

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A Dual-Mode CMOS Image Sensor Based on In-Pixel Frame Differencing

NS-MD: Near-Sensor Motion Detection with Energy Harvesting Image Sensor for Always-On Visual Perception.

Non-volatile Rippled-Assisted Optoelectronic Array for All-Day Motion Detection and Recognition

research in CMOS-compatible silicon-based photodetector

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Novel Photodetectors and Image Sensors Based on Silicon-on-insulator Substrate.

High-performance one-dimensional MOSFET array photodetectors in the 0.8-m standard CMOS process

In-sensor Dynamic Computing for Intelligent Machine Vision

Hybrid MOS-PN photodiode with positive feedback for pulse-modulation imaging