Extending the spectrum of fully integrated photonics
Minh Tran,Chong Zhang,Theodore Morin,Lin Chang,Sabyasachi Barik,Zhiquan Yuan,Woonghee Lee,Glenn Kim,Aditya Malik,Zeyu Zhang,Joel Guo,Heming Wang,Boqiang Shen,Lue Wu,Kerry Vahala,John Bowers,Tin Komljenovic,Hyundai Park
DOI: https://doi.org/10.48550/arXiv.2112.02923
2021-12-10
Abstract:Integrated photonics has profoundly impacted a wide range of technologies underpinning modern society. The ability to fabricate a complete optical system on a chip offers unrivalled scalability, weight, cost and power efficiency. Over the last decade, the progression from pure III-V materials platforms to silicon photonics has significantly broadened the scope of integrated photonics by combining integrated lasers with the high-volume, advanced fabrication capabilities of the commercial electronics industry. Yet, despite remarkable manufacturing advantages, reliance on silicon-based waveguides currently limits the spectral window available to photonic integrated circuits (PICs). Here, we present a new generation of integrated photonics by directly uniting III-V materials with silicon nitride (SiN) waveguides on Si wafers. Using this technology, we present the first fully integrated PICs at wavelengths shorter than silicon's bandgap, demonstrating essential photonic building blocks including lasers, photodetectors, modulators and passives, all operating at sub-um wavelengths. Using this platform, we achieve unprecedented coherence and tunability in an integrated laser at short wavelength. Furthermore, by making use of this higher photon energy, we demonstrate superb high temperature performance and, for the first time, kHz-level fundamental linewidths at elevated temperatures. Given the many potential applications at short wavelengths, the success of this integration strategy unlocks a broad range of new integrated photonics applications.
Optics,Applied Physics