Enabling Scalable, Ultralow-Voltage Flexible Organic Field-Effect Transistors Via Blade-Coated Cross-Linked Thick Polyvinyl Alcohol Gate Dielectric

Huaijie Fu,Jinlei Peng,Liuzhi Xiang,Qiaoming Zhang,Xingwen Tan,Yanlian Lei
DOI: https://doi.org/10.1109/ted.2023.3264488
IF: 3.1
2023-01-01
IEEE Transactions on Electron Devices
Abstract:A scalable ultralow-voltage flexible organic field-effect transistor (OFET) design has been accomplished through utilization of a blade-deposited thick cross-linked polyvinyl alcohol (c-PVA) dielectric. This blade-deposited thick c-PVA dielectric film is capable of suppressing device leakage, enabling high-performing OFETs with benchmark electrical properties of ultr- alow operation voltage (< 1 V), high field-effect mobility close to 10 cm2/ $\text{V}\cdot \text{s}$ , and excellent subthreshold swing < 100 mV/decade. In addition, the OFETs with blade-deposited c-PVA gate dielectric have exhibited excellent mechanical stress stability, with only minimum performance degradation after 2 h of static bending or $10^{{3}}$ cycles of bending. These results will enable realization of a simple low-cost manufacturing process for high-performance, low-voltage flexible OFETs for a great variety of organic electronics.
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