Metal Atom Doping-Induced S-scheme Heterojunction Boosts the Photoelectric Response

Mingwang Liu,Jing Wen,Ying Qin,Jinli Li,Yinjun Tang,Lei Jiao,Yu Wu,Qie Fang,Lirong Zheng,Xiaowen Cui,Wenling Gu,Chengzhou Zhu,Liuyong Hu,Shaojun Guo
DOI: https://doi.org/10.1007/s11426-022-1521-1
2023-01-01
Abstract:Carrier migration path and driving forces are two crucial factors for charge separation of heterojunction with efficient photoelectric response from the thermodynamic and kinetic perspectives, respectively. Constructing the S-scheme heterojunction and achieving an efficient migration path for space charge separation have aroused great interest, while a thorough insight into tuning interfacial band bending for S-scheme heterojunction is absent. Herein, we report a class of Zn atom-doped CeO 2 /g-C 3 N 4 heterostructure for achieving a new carrier migration path conversion from inferior type-II to advanced S-scheme. Zn-dependent volcano-type plot for Zn-CeO 2 is established to tune the Fermi level of CeO 2 . The built-in electric field for carrier flow dynamics strengthens when coupling with g-C 3 N 4 , which significantly boosts the photoelectric response. Based on the intrinsic enzymelike activity of Zn-CeO 2 , we further demonstrate that the Zn-CeO 2 /g-C 3 N 4 S-scheme heterojunction can be explored for constructing a sensitive nanozymatic photoelectrochemical biosensor for the detection of acetylcholinesterase.
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