Abstract:Overlay (OVL) is one significant performance indicator for the lithography process control in semiconductor manufacturing. The accuracy of the OVL metrology is extremely critical for guarantee the lithography quality. Currently, diffraction-based overlay (DBO) is one of the mainstream OVL metrology techniques. Unfortunately, the accuracy of the DBO metrology is largely affected by the defect features of the overlay target. Therefore, there is a strong need to investigate the impacts of these target defects on the DBO metrology performance. However, efficiently investigating the statistical and interactive impacts of various DBO target defects remains challenging. This study aims to address this issue through proposing an intelligent sensitivity analysis approach. A cumulative distribution based Global Sensitivity Analysis (GSA) method is utilized to assess the nonlinear influences of multiple defects in the OVL target on the DBO inaccuracy. The scenarios with both known and unknow distributions of the OVL target defects are considered. For the former, a neural network driven forward model is constructed for fast calculating the optical diffraction responses to accelerate the GSA process. For the latter, another neural network based inverse model are built for efficiently estimating the distribution of the target defects. Finally, a series of simulation experiments are conduct for typical DBO targets with multiple common defect features. The results demonstrate the effectiveness and robustness of the proposed approach as well as give valuable insights into the DBO defect analysis. Our study provides a strong tool to assist the practitioners in achieving intelligent and efficient DBO analysis and thus in enhancing OVL metrology performance.

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