Abstract: Photodetectors with high responsivity, broadband response to mid-infrared range are in a great demand in optical detection area. Topological charge-density-wave (CDW) semimetal materials with high carrier mobility and near zero bandgap provide an emerging route to meet the demand. Here we firstly investigated the photo/magnetic field reshaped CDW melting phenomenon of quasi one dimensional (1D) topological CDW semimetal (TaSe4)2I. Two orders of magnitude of hysteretic resistance variation is achieved due to CDW melting, which can be manipulated by electric, magnetic field or photoexcitation. In situ polarized Raman scattering spectroscopy reveals the concurrent occurrence of both electronic and structural phase transition. Surprisingly, the phase transition could be driven by applying a minimum voltage interval of 10 {\mu}V or a magnetic field interval of 83 Oe at a moderate temperature 120 K. The sharpness of the transition is manifested by single point current jumping (SPCJ). Photodetectors based on this transition has much superior performance than that of quasi two dimensional (2D) TaS2 reported in literature, which is also elaborated by our density functional theory (DFT) calculation. Photoresponsivity at 120 K from visible (405 A/W @ 532 nm) to mid-infrared (31.67 A/W @ 4.73 um) and detectivity (7.2E9 Jones @ 532 nm, 5.6E8 Jones @ 4.73 um) are both one order of magnitude higher than that of TaS2 while the photoresponsivity and detectivity also outperforms commercialized HgCdTe material. Our work not only reveals the important role of dimensionality in CDW phase transition, but also paves a new way for implementing ultrasensitive, broadband photodetector as well as transconductance transistor, memory devices by exploiting quasi-1D topological CDW materials

Distinguishing and Controlling Mottness in 1T-Tas2 by Ultrafast Light

Distinguishing and controlling Mottness in 1T-TaS$_2$ by ultrafast light

Uncovering the nature of transient and metastable non-equilibrium phases in 1$T$-TaS$_2$

Phase-resolved frequency-domain analysis of the photoemission spectra for photoexcited 1T-TaS2 in the Mott insulating charge density wave state

Modulating Charge Density Wave Order in a 1T-Tas2/black Phosphorus Heterostructure.

Ultrasensitive resistance switching and giant photoresponsivity from visible to mid-infrared of quasi one-dimensional Weyl semimetal (TaSe4)2I

Revealing Light-Induced Charge Density Wave Melting and Carrier Redistribution in 1T-Tise2

Photoinduced Hidden CDW State and Relaxation Dynamics of 1T-Tas_2 Probed by Time-Resolved Terahertz Spectroscopy

Excitation-density and Excess-Energy Dependence of Ultrafast Dynamics of Photoexcited Carriers in Intrinsic Bulk CdTe

Ultrafast doublon dynamics in photo-excited 1T-TaS$_2$

Ultrafast Switching from the Charge Density Wave Phase to a Metastable Metallic State in

Optical Spectroscopy and Ultrafast Pump-Probe Study of Structural Phase Transition in 1T'-Tate2

A Metallic Mosaic Phase and the Origin of Mott-insulating State in 1T-Tas 2

Photodoping-modified charge density wave phase transition in WS 2 /1 T -TaS 2 heterostructure

Concurrent probing of electron-lattice dephasing induced by photoexcitation in 1T-TaSeTe using ultrafast electron diffraction

Photoinduced Multistage Phase Transitions in Ta2NiSe5

Ultrafast Electronic Dynamics of a Weyl Semimetal MoTe_2 Revealed by Time and Angle Resolved Photoemission Spectroscopy

Direct measurement of photoinduced transient conducting state in multilayer 2H-MoTe2

Dynamic phase transition into a mixed-CDW state in 1$T$-TaS$_2$ via a thermal quench

Band insulator to Mott insulator transition in 1T-TaS$_2$

Mottness Collapse in 1T-Tas2-xsex Transition- Metal Dichalcogenide: an Interplay Between Localized and Itinerant Orbitals