Planar Tunneling Spectroscopy on Van Der Waals Superconductors with AlOx Junction Grown by Atomic Layer Deposition

Yu Ji,Hao Wang,Zehao Dong,Shusen Ye,Qingyang Li,Zhiting Gao,G. D. Gu,Zhenqi Hao,Yayu Wang
DOI: https://doi.org/10.1063/5.0124947
IF: 2.877
2023-01-01
Journal of Applied Physics
Abstract:We demonstrate a method for fabricating a high-quality AlOx-based planar tunnel junction using atomic layer deposition, integrated with the exfoliation and transfer techniques for van der Waals (vdW) materials. The tunneling spectroscopy results on exfoliated Bi2Sr2CaCu2O8+δ and 2H-NbSe2 vdW superconductors are highly consistent with that obtained by ultrahigh vacuum scanning tunneling spectroscopy on atomically clean surfaces. The planar tunneling devices enable high-precision spectroscopy over a wide range of temperatures and magnetic fields and reveal novel features and stark contrast between high-TC cuprates and conventional superconductors. This method represents a universally applicable technique for probing the electronic structure of various two-dimensional vdW materials.
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