Abstract:Because of the strong Coulomb interaction and quantum confinement effect, 2-dimensional transition metal dichalcogenides possess a stable excitonic population. To realize excitonic device applications, such as excitonic circuits, switches, and transistors, it is of paramount importance for understanding the optical properties of transition metal dichalcogenides. Furthermore, the strong quantum confinement in 2-dimensional space introduces exotic properties, such as enhanced phonon bottlenecking effect, many-body interaction of excitons, and ultrafast nonequilibrium exciton–exciton annihilation. Exciton diffusion is the primary energy dissipation process and a working horse in excitonic devices. In this work, we investigated time-resolved exciton propagation in monolayer semiconductors of WSe2, MoWSe2, and MoSe2, with a home-built femtosecond pump-probe microscope. We observed ultrafast exciton expansion behavior with an equivalent diffusivity of up to 502 cm2 s−1 at the initial delay time, followed by a slow linear diffusive regime (20.9 cm2 s−1) in the monolayer WSe2. The fast expansion behavior is attributed to energetic carrier-dominated superdiffusive behavior. We found that in the monolayers MoWSe2 and MoSe2, the energetic carrier-induced exciton expansion is much more effective, with diffusivity up to 668 and 2295 cm2 s−1, respectively. However, the “cold” exciton transport is trap limited in MoWSe2 and MoSe2, leading to negative diffusion behavior at later time. Our findings are helpful to better understand the ultrafast nonlinear diffusive behavior in strongly quantum-confined systems. It may be harnessed to break the limit of conventional slow diffusion of excitons for advancing more efficient and ultrafast optoelectronic devices.

Super-linear Behavior of Exciton Emission in Electrically-gated Two-dimensional Material

Threshold-like Superlinear Accumulation of Excitons in a Gated Monolayer Transition Metal Dichalcogenide

Electrical Control of Excitonic Oscillator Strength and Spatial Distribution in a Monolayer Semiconductor

Observation of excitonic fine structure in a 2D transition-metal dichalcogenide semiconductor.

Dynamics of exciton energy renormalization in monolayer transition metal disulfides

Approaching the intrinsic exciton physics limit in two-dimensional semiconductor diodes

Photoluminescence Switching Effect in a Two-Dimensional Atomic Crystal

Photoluminescence switching in a two-dimensional atomic crystal

Charged biexciton polaritons sustaining strong nonlinearity in 2D semiconductor-based nanocavities

Transient Superdiffusion of Energetic Carriers in Transition Metal Dichalcogenides Visualized by Ultrafast Pump-Probe Microscopy

Coexistence of Incoherent and Ultrafast Coherent Exciton Transport in a Two-Dimensional Superatomic Semiconductor

Remote Lightening and Ultrafast Transition: Intrinsic Modulation of Exciton Spatiotemporal Dynamics in Monolayer MoS2.

Transient Dynamics and Long-Range Transport of 2D Exciton with Managed Potential Disorder and Phonon Scattering

Exploration Of Exciton Behavior In Atomically Thin Ws2 Layers By Ionic Gating

Intrinsic donor-bound excitons in ultraclean monolayer semiconductors

Transient Photoluminescence Spectra of Ii-Vi Wide Gap Znse Zns Strained-Layer Superlattices

Exciton Absorption in Semiconductor Superlattices in A Strong Longitudinal Thz Field

Defects inducing anomalous exciton kinetics in monolayer WS2

Nonlinear Charge Transport and Excitable Phenomena in Semiconductor Superlattices

Influence of Lattice Vibrations on Luminescence and Transfer of Excitons in WS2monolayer Semiconductors

Two-Dimensional Exciton Oriented Diffusion via Periodic Potentials