Abstract:This study leverages the synergy of modulating conductive filament to render a significant breakthrough in memory window, extending up to 1 million, and retention for up to 10 years, fostering advanced paradigms in bionics. These results underscore the judicious regulation of ion migration as a viable route to high‐performance memristors for neuromorphic computing applications. Memristors offer a promising solution to address the performance and energy challenges faced by conventional von Neumann computer systems. Yet, stochastic ion migration in conductive filament often leads to an undesired performance tradeoff between memory window, retention, and endurance. Herein, a robust memristor based on oxygen‐rich SnO2 nanoflowers switching medium, enabled by seed‐mediated wet chemistry, to overcome the ion migration issue for enhanced analog in‐memory computing is reported. Notably, the interplay between the oxygen vacancy (Vo) and Ag ions (Ag+) in the Ag/SnO2/p++‐Si memristor can efficiently modulate the formation and abruption of conductive filaments, thereby resulting in a high on/off ratio (>106), long memory retention (10‐year extrapolation), and low switching variability (SV = 6.85%). Multiple synaptic functions, such as paired‐pulse facilitation, long‐term potentiation/depression, and spike‐time dependent plasticity, are demonstrated. Finally, facilitated by the symmetric analog weight updating and multiple conductance states, a high image recognition accuracy of ≥ 91.39% is achieved, substantiating its feasibility for analog in‐memory computing. This study highlights the significance of synergistically modulating conductive filaments in optimizing performance trade‐offs, balancing memory window, retention, and endurance, which demonstrates techniques for regulating ion migration, rendering them a promising approach for enabling cutting‐edge neuromorphic applications.

Simultaneously Elevating the Resistive Switching Performance and Thermal/Irradiative Stabilities of Biomemorizer Based on Twistedcarboxylated Multi-Walled Carbon Nanotube-Chitosan Composites

A sustainable resistive switching memory device based on organic keratin extracted from hair

Multi-Bit Biomemory Based on Chitosan: Graphene Oxide Nanocomposite with Wrinkled Surface

Sustainable nonvolatile resistive switching memory using chitosan/MEH-PPV polymer blend

Enhancing the Resistive Switching Performance in a Physically Transient Memristor by Doping MoS<sub>2</sub> Quantum Dots

The Effects of MCNTs on Electro-Spinning Carbonization Microstructure of Polyimide Composite Film and Resistive Switching Behavior

Chitosan-Based Flexible Memristors with Embedded Carbon Nanotubes for Neuromorphic Electronics

Natural biomaterial-based memristor bearing protonated polydopamine with enhanced bipolar resistive switching performance and environmental robustness

Resistive Switching Characteristic Improvement in a Single-Walled Carbon Nanotube Random Network Embedded Hydrogen Silsesquioxane Thin Films for Flexible Memristors

From dead leaves to sustainable organic resistive switching memory

Enhancing the Resistive Switching Performance in a Physically Transient Memristor by Doping <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mrow><mml:mi>Mo</mml:mi><mml:mi mathvariant="normal">S</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:ms

Unconventional Resistive Switching Behavior in Fibroin‐Based Memristor

Exploring conductance modulation and implementation of convolutional neural network in Pt/ZnO/Al2O3/TaN memristors for brain-inspired computing

Evolution between CRS and NRS behaviors in MnO2@TiO2 nanocomposite based memristor for multi-factors-regulated memory applications

Chemical and Resistive Switching Properties of Elaeodendron buchananii Extract–Carboxymethyl Cellulose Composite: A Potential Active Layer for Biodegradable Memory Devices

A carbon conductive filament-induced robust resistive switching behavior for brain-inspired computing

Flexible multilevel nonvolatile biocompatible memristor with high durability

MoS2 Nanosheets Functionalized with Ferrocene-Containing Polymer Via SI-ATRP for Memristive Devices with Multilevel Resistive Switching

Combination Of Conductive Filaments And Schottky Behavior In Multifunctional Sn1-Xcuxo2-Delta Memristor

Synergistically Modulating Conductive Filaments in Ion‐Based Memristors for Enhanced Analog In‐Memory Computing

Evolution Between CRS and NRS Behaviors in MnO 2 @TiO 2 Nanocomposite Based Memristor for Multi-factors-regulated Memory Applications