Abstract:The incessant reduction of transistor dimensions requires new transformations in devices or novel materials to further sustain Moore's law. From the 5 nm technology node and beyond, the gate-all-around field effect transistor (GAAFET) dominates the semiconductor industry, owing to its ultimate gate electrostatic controllability. Two-dimensional (2D) materials possess the merits of dangling-bond-free surfaces, atomic thicknesses down to sub-1 nm, and high mobility maintenance at sub-1 nm thickness, which are challenges long plaguing traditional three-dimensional (3D) semiconductors. Herein, we devised a double-gated GAAFET (DG GAAFET) based on monolayer MoS2. Compared with a DG GAAFET based on Si with the same footprint, the MoS2 DG GAAFET demonstrates the capability of suppressing short-channel effects out of the regime of the Si DG GAAFET, though a relatively small I-on value, which is attributed to the lower density of states, has been obtained in the monolayer MoS2 DG GAAFET. A single-gated GAAFET based on monolayer MoS2 (MoS2 SG GAAFET) has also been simulated as a control device, which manifests an inferior device performance and degraded short-channel effects compared to those of the MoS2 DG GAAFET, which are revealed by larger SS and a reduced I-on/I-off ratio. It is verified to be feasible to surge I-on by 84% without short-channel effect degradation via the incorporation of an additional channel, bobbing well for the application of the DG GAAFET device based on 2D materials in high-performance electronics. Besides, a logic inverter based on a double-channeled double-gated GAAFET (DG DC GAAFET) based on WSe2 and MoS2 has been simulated, and a voltage gain of 36 has been obtained under a gate voltage of 2 V. Moreover, an additional degree of freedom can be introduced by adding a SiO2 interlayer, which contributes to the subthreshold voltage matching between a MoS2 n-type transistor and a WSe2 p-type transistor, where a voltage gain of 45 at a gate voltage of 2 V has been obtained. Both the above complementary metal-oxide-semiconductor (CMOS) inverter structures can make full play of the inner areas of the GAA structure, which sheds light on the footprint decrease of inverters, leaving room for more electronics to be crammed into a single chip.

Promising Ultra-Short Channel Transistors Based on OM2S (M = Ga, In) Monolayers for High Performance and Low Power Consumption

Two dimensional semiconducting materials for ultimately scaled transistors

First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3

2D Short‐Channel Tunneling Transistor Relying on Dual‐Gate Modulation for Integrated Circuits Application

Sub-5-nm Ultra-thin In_2O_3 Transistors for High-Performance and Low-Power Electronic Applications

Scaling of MoS 2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance

Sub-5-nm Ultra-thin In$_2$O$_3$ Transistors for High-Performance and Low-Power Electronic Applications

Short-Channel Effect Suppression and Footprint Reduction in Double Gate-All-Around Field Effect Transistors and Inverters Based on Two-Dimensional Materials

Transistors based on Novel 2-D Monolayer Semiconductors Bi2O2Se, InSe, and MoSi2N4 for Enhanced Logic Density Scaling

Sub-5 nm Ultrathin In2O3 Transistors for High-Performance and Low-Power Electronic Applications

Modifying the Power and Performance of 2-Dimensional MoS 2 Field Effect Transistors

Sub-5 Nm Monolayer MoS2 Transistors Toward Low-Power Devices

Promising Properties of Sub-5 nm Monolayer MoSi2N4 Transistor

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors.

High-performance Sub-10 Nm Monolayer Bi2O2Se Transistors

Sub-5 nm Monolayer MoS 2 Transistors toward Low-Power Devices

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Recent Experimental Breakthroughs on 2D Transistors: Approaching the Theoretical Limit

Ultra-Steep-Slope High-Gain MoS2 Transistors with Atomic Threshold-Switching Gate

Scaled contact length with low contact resistance in monolayer 2D channel transistors.

Sub-10 Nm Two-Dimensional Transistors: Theory and Experiment