Abstract:The discovery of graphene in 2004 by Konstantin Novoselov and Andre Geim opened a new scientific arena: “2D materials”. The finding of new layered and non-layered materials and their potential applications in various fields has been taken a great attention in recent years. A wide variety of 2D materials such as transition metal dichalcogenides (TMDs), transition metal trichalogenides (Bi2Se3, Bi2Te3, etc.), transition metal monochalcogenide (GaSe, GaS, etc.), transition metal thiophosphides (MnPS3, FePS3, etc.), silicene, phosphorene and hexagonal boron nitride have been found to possess many fascinating and unique properties that are promising for various potential applications such as in optoelectronics, sensors, spintronics, valleytronics, energy storage and catalysis. Among the 2D family, the TMDs grasp diverse properties, ranging from insulator, semimetal, metal, semiconductor and superconductor and make them most interesting 2D materials in both academic and industrial perspectives. The TMDs are usually abbreviated by the chemical formula of MX2, where M is a transition metal such as Cr, Mo, W, Re, Ta, Zr and Pd, and X is a chalcogen of S, Se and Te. The different filling states of the d orbitals in this wide range of transition metals gives rise to TMDs with versatile properties. Among TMDs, group 6 TMDs such as MoS2, WS2, MoSe2 and WSe2 are attracting great attention due to their semiconducting nature, layer-dependent bandgap and strong light–matter interaction. The finite and tunable bandgap of group 6 TMDs compensate the lack in microelectronic application of graphene which arises due to its gapless feature. Herein we address different phases of TMDs including hexagonal (H), trigonal (T) and rhombohedral (R). We reviewed the optical and electronic properties such as thickness-dependent band structure, spin–orbit coupling, excitonic properties, Berry-phase-related properties and valley Hall effect of semiconducting TMDs. The modulation of electronic properties by external stimuli such as electric field and strain is also discussed in this chapter. The metallic TMDs such as 1T phase of group 6 TMDs, Ti-, V-, Nb-based TMD and 2H phase of NbS2, NbSe2, TaS2 and TaSe2 are discussed. The magnetism, strain and doping-induced magnetism in both metallic and semiconducting TMDs are addressed in this chapter.

Transition Metal Dichalcogenide Magnetic Atomic Chains

Small Transition-Metal Dichalcogenide Nanostructures Down to Subnanometer by Two-Dimensional Material Origami

Deriving 2d M2x3 (M = Mo, W, X = S, Se) By Periodic Assembly Of Chalcogen Vacancy Lines In Their Mx2 Counterparts

Prediction of T- and H-Phase Two-Dimensional Transition-Metal Carbides/Nitrides and Their Semiconducting-Metallic Phase Transition.

Magnetic 3d Transition Metal Atomic Chains Modulated by the Intrinsic Valley Structure in MX Monolayer

The mechanical, electronic and optical properties of two-dimensional transition metal chalcogenides MX<sub>2</sub> and M<sub>2</sub>X<sub>3</sub> (M = Ni, Pd; X = S, Se, Te) with hexagonal and orthorhombic structures

A First-Principle Study of Monolayer Transition Metal Carbon Trichalcogenides

Two-Dimensional M-Chalcogene Family with Tunable Superconducting, Topological, and Magnetic Properties

Stabilization of NbTe3, VTe3, and TiTe3 via Nanotube Encapsulation

Ultra-stable small diameter hybrid transition metal dichalcogenide nanotubes X–M–Y (X, Y = S, Se, Te; M = Mo, W, Nb, Ta): a computational study

Computational design of double transition metal MXenes with intrinsic magnetic properties

Electronic Band Gap Tuning and Calculations of Mechanical Strength and Deformation Potential by Applying Uniaxial Strain on MX2 (M = Cr, Mo, W and X = S, Se) Monolayers and Nanoribbons

First Principles Study of Structural, Vibrational and Electronic Properties of Graphene-Like MX2 (m=mo, Nb, W, Ta; X=S, Se, Te) Monolayers

Dimensionally Extending from 1D MX‐Chain to Ladder and Nanotube Systems: Structural and Electronic properties

Two-Dimensional, Ordered, Double Transition Metals Carbides (MXenes).

Atomic Wires of Transition Metal Chalcogenides: A Family of 1D Materials for Flexible Electronics and Spintronics

2D Materials by Design: Intercalation of Cr or Mn between two VSe2 van der Waals Layers.

Layer-Dependent Magnetism in Two-Dimensional Transition-Metal Chalcogenides MnTn + 1 (M = V, Cr, and Mn; T = S, Se, and Te; and N = 2, 3, and 4)

Realistic tight-binding model for monolayer transition metal dichalcogenides in 1T' structure

Simulation of Transition Metal Dichalcogenides

Magnetism and Electronic Phase Transitions in Monoclinic Transition Metal Dichalcogenides with Transition Metal Atoms Embedded