Ultrafast Response of Spontaneous Photovoltaic Effect in 3R-Mos2-based Heterostructures

Jingda Wu,Dongyang Yang,Jing Liang,Max Werner,Evgeny Ostroumov,Yunhuan Xiao,Kenji Watanabe,Takashi Taniguchi,Jerry I. Dadap,David Jones,Ziliang Ye
DOI: https://doi.org/10.1126/sciadv.ade3759
IF: 13.6
2022-01-01
Science Advances
Abstract:Rhombohedrally stacked MoS2 has been shown to exhibit spontaneous polarization down to the bilayer limit and can sustain a strong depolarization field when sandwiched between graphene. Such a field gives rise to a spontaneous photovoltaic effect without needing any p-n junction. In this work, we show that the photovoltaic effect has an external quantum efficiency of 10% for devices with only two atomic layers of MoS2 at low temperatures, and identify a picosecond-fast photocurrent response, which translates to an intrinsic device bandwidth at ∼100-GHz level. To this end, we have developed a nondegenerate pump-probe photocurrent spectroscopy technique to deconvolute the thermal and charge-transfer processes, thus successfully revealing the multicomponent nature of the photocurrent dynamics. The fast component approaches the limit of the charge-transfer speed at the graphene-MoS2 interface. The remarkable efficiency and ultrafast photoresponse in the graphene-3R-MoS2 devices support the use of ferroelectric van der Waals materials for future high-performance optoelectronic applications.
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