Abstract:Abstract Although tin monoxide (SnO) is an interesting compound due to its p -type conductivity, a widespread application of SnO has been limited by its narrow band gap of 0.7 eV. In this work, we theoretically investigate the structural and electronic properties of several SnO phases under high pressures through employing van der Waals (vdW) functionals. Our calculations reveal that a metastable SnO (β-SnO), which possesses space group P 2 1 / c and a wide band gap of 1.9 eV, is more stable than α-SnO at pressures higher than 80 GPa. Moreover, a stable (space group P2/ c ) and a metastable (space group Pnma ) phases of SnO appear at pressures higher than 120 GPa. Energy and topological analyses show that P 2 /c -SnO has a high possibility to directly transform to β-SnO at around 120 GPa. Our work also reveals that β-SnO is a necessary intermediate state between high-pressure phase Pnma -SnO and low-pressure phase α-SnO for the phase transition path Pnma -SnO →β-SnO → α-SnO. Two phase transition analyses indicate that there is a high possibility to synthesize β-SnO under high-pressure conditions and have it remain stable under normal pressure. Finally, our study reveals that the conductive property of β-SnO can be engineered in a low-pressure range (0–9 GPa) through a semiconductor-to-metal transition, while maintaining transparency in the visible light range.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to synthesize a new tin monoxide (SnO) phase, especially β - SnO, with a wider bandgap under external high - pressure conditions, and study its structural and electronic properties under different pressures. Specifically: 1. **The problem of narrow bandgap**: Tin monoxide (SnO) is an interesting compound because of its p - type conductivity, but its narrow bandgap (0.7 eV) limits its wide application in fields such as solar cells. Therefore, researchers hope to change the structure and electronic characteristics of SnO through high - pressure conditions to obtain a new phase with a wider bandgap. 2. **Synthesis and stability of new phases**: Researchers predict through theoretical calculations that new SnO phases, such as β - SnO, P2/c - SnO and Pnma - SnO, can be synthesized under high - pressure conditions. Among them, β - SnO is more stable than α - SnO above 80 GPa and may remain stable at normal pressure. In addition, P2/c - SnO is dynamically stable in the range of 120 - 150 GPa and may transform into β - SnO during the decompression process. 3. **Regulation of electronic properties**: The study also found that β - SnO can regulate its conductivity and optical transparency through the semiconductor - to - metal transition in the low - pressure range (0 - 9 GPa). At 0 GPa, β - SnO has a direct bandgap of 1.9 eV, while at 9 GPa the bandgap is almost zero, and then as the pressure increases, the bandgap widens again and closes at about 13 GPa. This pressure - induced bandgap change indicates that β - SnO has the potential to be used as a pressure sensor. In summary, this paper aims to synthesize a new SnO phase (especially β - SnO) with a wider bandgap through high - pressure conditions, and explore its structural and electronic properties under different pressures, so as to overcome the limitation of the narrow bandgap of SnO on its wide application.

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