Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

Research Progress in Low-Cost Tunable Semiconductor Lasers

Monolithic tunable lasers for low cost DWDM networks

Full-Band Tunable V-Cavity Laser for Low-Cost Access and Data Center Networks

Performance of Wavelength Division Multiplexing System Based on V-Cavity Semiconductor Laser

Tunable V-Cavity Semiconductor Laser And Modules

Simple and Compact Tunable Semiconductor Lasers Based on Novel Half-Wave Coupler

Direct Modulation of Widely Tunable V-Cavity-Laser for Low-Cost WDM Access Networks

Full C-Band Tunable V-Cavity-Laser Based Tosa and Sfp Transceiver Modules

Electro-absorption Modulated Tunable V-cavity Laser

Modeling of Widely Tunable V-cavity Semiconductor Laser Using Time-Domain Traveling-Wave Method

Simple and Compact V-cavity Semiconductor Laser with 50×100 GHz Wavelength Tuning.

4*10 Gbps WDM Communication System Based on a Tunable V-cavity Semiconductor Laser.

Progresses on monolithic integrated tunable laser diodes

Widely Tunable Electro-Absorption Modulated V-Cavity Laser

Wavelength Switching and All-Optical Flip-Flop in Tunable V-cavity Laser

Wavelength‐Tunable Micro/Nanolasers

Novel Semiconductor Lasers and Integrated Photonic Devices

10Gb/s Direct Modulation of Widely Tunable V-Cavity-Laser with Chirp Managed Laser Technology

Wavelength Tunable Laser Based on Distributed Reflectors with Deep Submicron Slots

Tunable Quantum Dot Lasers Grown Directly on Silicon

Tunable V-Coupled-Cavity Semiconductor Laser Monolithically Integrated with Monitoring Photodiodes Using Deeply Etched Reflective Trenches