Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

Progresses on monolithic integrated tunable laser diodes

Monolithic tunable lasers for low cost DWDM networks

Research Progress in Low-Cost Tunable Semiconductor Lasers

Tunable V-Coupled-Cavity Semiconductor Laser Monolithically Integrated with Monitoring Photodiodes Using Deeply Etched Reflective Trenches

Review of 1.55 μm Waveband Integrated External Cavity Tunable Diode Lasers

Tunable V-Cavity Semiconductor Laser And Modules

Monolithic Integration of Tunable V-coupled-cavity Laser and Mach-Zehnder Modulator on Generic InP Platform

Full C-Band Tunable V-Cavity-Laser Based Tosa and Sfp Transceiver Modules

Research Progress of Monolithic Integrated DFB Laser Arrays for Optical Communication

Research Progress in Tunable Fiber Lasers Based on Multimode Interference Filters

Simple and Compact Tunable Semiconductor Lasers Based on Novel Half-Wave Coupler

Full-Band Tunable V-Cavity Laser for Low-Cost Access and Data Center Networks

Tunable Quantum Dot Lasers Grown Directly on Silicon

Modeling of Widely Tunable V-cavity Semiconductor Laser Using Time-Domain Traveling-Wave Method

Monolithically Integrated Distributed Feedback Laser Array Wavelength-Selectable Light Sources for WDM-PON Application

Simulation And Design Of Monolithically Integrated Tunable Wavelength Converter Based On V-Cavity Laser And Delayed Mach-Zehnder Interferometer

Compact and Low Power Consumption Hybrid Integrated Wavelength Tunable Laser Module Using Silicon Waveguide Resonators

Study of Cascaded Tunable DFB Semiconductor Laser with Wide Tuning Range and High Single Mode Yield Based on Equivalent Phase Shift Technique

Development of Silicon Photonic Devices for Optical Interconnects

Research Progress of Tunable Single-Frequency Fiber Lasers

Tunable V-Cavity Laser Monolithically Integrated with Traveling Wave Mach-Zehnder Modulator