Abstract:Pulsed laser deposition (PLD) and two-step thermal annealing are combined to fabricate MgO, TiO 2 , Y 2 O 3 , Al 2 O 3 , ZrO 2 and HfO 2 passivation layers on a-IGZO TFTs. The influences of the passivation layers on the electrical properties are investigated. It is found that conventional PLD is sufficient to deposit high-quality Y 2 O 3 and ZrO 2 passivation layers, but hollow cathode assisted PLD (HC-PLD) should be employed to solve the oxygen deficiency in MgO, TiO 2 , Al 2 O 3 , and HfO 2 thin films by oxygen plasma. Furthermore, two-step annealing is adopted to improve the performances of the devices: Firstly, a-IGZO thin films are pre-annealed to enhance the carrier mobility. Secondly, the passivation layers are deposited on a-IGZO and the whole structures are post-annealed to endow the good on-off performance. The sharp a-IGZO/passivation interfaces remain after thermal annealing. The Hall mobility is mainly restricted by the scattering of metal ions at the a-IGZO/passivation interface. TiO 2 passivated devices exhibit the highest Hall mobility of 16.7 cm 2 V −1 s −1 , owing to the smaller cation charge. The threshold voltage stability under positive gate bias is dependent on the metal-oxygen bond strength in the passivation layers. ZrO 2 passivated devices have the lowest threshold voltage shift, beneficial from the strong Zr-O bonds. The subthreshold performance and the stability under illumination are determined by the oxygen vacancies at a-IGZO/passivation interfaces and ZrO 2 passivated devices exhibit the lowest subthreshold swing and the best illumination stability.

Migration of Weakly Bonded Oxygen Atoms in A-Igzo Thin Films and the Positive Shift of Threshold Voltage in TFTs

Persistent Photoconductivity in A-Igzo Thin Films Induced by Trapped Electrons and Metastable Donors

Electrical And Photosensitive Characteristics Of A-Igzo Tfts Related To Oxygen Vacancy

Thermally Induced Variation of the Turn-ON Voltage of an Indium–Gallium–Zinc Oxide Thin-Film Transistor

Enhancement Mechanism of Al<sub>2</sub>O<sub>3</sub> Passivation Layer on Electrical Properties of a-IGZO Thin Film Transistors

Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses

Origin of light instability in amorphous IGZO thin-film transistors and its suppression

Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

A Model for Threshold Voltage Shift under Negative Gate Bias Stress in Amorphous Ingazno Thin Film Transistors

Stability and gap states of amorphous In-Ga-Zn-Ox thin film transistors: Impact of sputtering configuration and post-annealing on device performance

Oxygen interstitial creation in a-IGZO thin-film transistors under positive gate-bias stress

Effect Of O-2 Flow Rate During Channel Layer Deposition On Negative Gate Bias Stress-Induced V-Th Shift Of A-Igzo Tfts

Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress

Improvement of Negative Bias Temperature Illumination Stability of Amorphous IGZO Thin-Film Transistors by Water Vapor-Assisted High-Pressure Oxygen Annealing

Effects Of Channel Composition And Gate Dielectrics On The Stability Of A-Igzo Tfts

Anomalous Threshold Voltage Shift and Surface Passivation of Transparent Indium–Zinc–Oxide Electric-Double-Layer TFTs

Threshold-voltage Shift Model Based on Electron Tunneling under Positive Gate Bias Stress for Amorphous InGaZnO Thin-Film Transistors

Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors

Analysis of Channel-Length Dependence of Residual Hydrogen Diffusion From the Gate Insulator During Oxygen Annealing Treatment in IGZO TFTs

Self-Compensation Effect of Photo-Bias Instabilities in a-InGaZnO Thin-Film Transistors Induced by Unique Ion Migration

Enhanced performances of a-IGZO TFTs with oxide passivation layers fabricated by hollow cathode assisted PLD