Flexible ZnO Nanosheet‐Based Artificial Synapses Prepared by Low‐Temperature Process for High Recognition Accuracy Neuromorphic Computing

YiLong Wang,Minghui Cao,Jing Bian,Qiang Li,Jie Su
DOI: https://doi.org/10.1002/adfm.202209907
IF: 19
2022-01-01
Advanced Functional Materials
Abstract:In neuromorphic computing networks, a flexible synaptic memristor with high recognition accuracy is highly desired. In this study, ZnO nanosheets (ZnO NS) embedded within a polymethyl methacrylate host material are used as the intermediate layer to prepare flexible synaptic memristor at a low-temperature of 80 degrees C. The device shows excellent switching characteristics with low SET/RESET voltages (-0.4 V/0.4 V) and stable retention characteristic (10(4) s). By modulating the conductance continuously, the flexible synaptic memristor simulates typical synaptic plasticities, including excitation post-synaptic current, paired-pulse facilitation, and spike-timing dependent plasticity. Especially, the neuromorphic system built from flexible ZnO NS-based memristors achieves a high recognition accuracy up to 97.7% for handwriting digit. Under the influence of 5% Uniform noise and 5% Gaussian noise, recognition accuracies are maintained at 94.6% and 93.7%, respectively. These properties are well maintained even when bending 1000 times at a radius of 5 mm. The flexible ZnO NS-based memristor shows great prospects in wearable devices and neural morphology calculation.
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