Abstract:The electro-luminescence (EL) properties of InGaN/GaN multiple quantum wells (MQWs) light emitting diodes (LEDs) with various emitting wavelength (purple, blue and green) were studied by scanning near-field optical microscope (SNOM). The high spatial resolution EL SNOM mappings and near-field spectra of the LEDs were acquired at various injection current conditions. The experiment shows that, though there are some common points, the EL properties of various LEDs are quite different. (i) The EL mappings show that the MQWs emission is spatially inhomogenous, which contain many islands like bright spots. (ii) The sizes of the bright spots are different ranging from 0.1 μm to 1μm, the LED with longer emitting wavelength has larger bright spots. (iii) The injection current dependences of the shape of the bright spots of various LEDs are different. (iv) The emission wavelengths of brighter spots are longer in the same LED. (v) Increasing the injection current, the full widths at half maximum (FWHM) of the EL spectra grow larger. With the same injection current, the green LED has larger FWHMs than the blue and purple ones. (vi) Increasing the injection current, the blue shift of the green LED is obviously (~60 meV), but those of the blue one and purple are negligible. The phenomena above suggest that, the self-organized In-rich regions play a key role in the emission of all the InGaN/GaN MQWs LEDs, though they have different influences on the emission properties of the three LEDs with various emission wavelengths. One possible explanation is that, in the blue and purple LEDs, because the size of the In-rich areas are small, the quantum confined Stark effect caused by the piezoelectric field is negligible; but in the green LED, the In-rich areas are larger, the quantum confined Stark effect is obvious which caused the blue shift phenomenon. And in all LEDs, the band filling effect makes the FWHMs of the emission spectra larger. The results also show that SNOM is a powerful tool to study the local light emission properties at nanometer scale.

The Differences in Spatial Luminescence Characteristics between Blue and Green Quantum Wells in Monolithic Semipolar (20-21) LEDs Using SNOM

An Efficient Green-Emitting Quantum Dot with Near-Unity Quantum Yield and Suppressed Auger Recombination for High-Performance Light-Emitting Diodes

Different Exciton Behaviors in Blue and Green Wells of Dual-Wavelength Ingan/Gan Mqws Structures

White light-emitting quantum dot diodes and tuning of luminescence processes

High Spatial Resolution Investigation of Electroluminescence of Ingan/Gan Multiple Quantum Wells by Using Scanning Near-Field Optical Microscopy and Spectroscopy

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

Photoluminescence Properties of Blue and Green Multiple InGaN/GaN Quantum Wells

White Light Emitting Diodes Based on Green Graphene Quantum Dots and Red Graphene Quantum Dots

On-nanowire Spatial Band Gap Design for White Light Emission.

Photoluminescence of Green InGaN/GaN MQWs Grown on Pre-Wells*

Effect of Localization States on the Electroluminescence Spectral Width of Blue–green Light Emitting InGaN/GaN Multiple Quantum Wells

Investigation of Optical Properties of InGaN–InN–InGaN/GaN Quantum-Well in the Green Spectral Regime

Issue of Spatial Coherence in MQW Based Micro-Led Simulation.

Optoelectronic Performance Variations in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes: Effects of Potential Fluctuation

Depth Profile of Donor–acceptor Pair Transition Revealing Its Effect on the Efficiency of Green LEDs

Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths*

Abnormal Stranski-Krastanov Mode Growth of Green InGaN Quantum Dots: Morphology, Optical Properties, and Applications in Light-Emitting Devices

High-Performance Green and Blue Light-Emitting Diodes Enabled by CdZnSe/ZnS Core/Shell Colloidal Quantum Wells

Study of the dominant luminescence mechanism in InGaN∕GaN multiple quantum wells comprised of ultrasmall InGaN quasiquantum dots

Enabling Ultranarrow Blue Emission Linewidths in Colloidal Alloy Quantum Dots by Decreasing the Exciton Fine Structure Splitting and Exciton-Phonon Coupling

Nanoscale Characterization of V-defect in InGaN/GaN QWs LEDs using Near-Field Scanning Optical Microscopy.