Abstract:Si$_{y}$Ge$_{1-x-y}$(C,Sn,Pb)$_{x}$ alloys have attracted significant attention as a route to achieve a direct-gap group-IV semiconductor. Using density functional theory (DFT) - employing local density approximation and hybrid Heyd-Scuzeria-Ernzerhof exchange-correlation functionals - we compute the lattice parameters, relaxed and inner elastic constants, and internal strain (Kleinman) parameters for elemental (diamond) group-IV materials and zinc blende IV-IV compounds. Our DFT calculations support a little-known experimental re-evaluation of the $\alpha$-Sn elastic constants, and contradict a recent prediction of dynamic instability in selected IV-IV compounds. DFT-calculated structural and elastic properties are used in conjunction with a recently derived analytical parametrisation of a harmonic valence force field (VFF) [Phys. Rev. B 100, 094112 (2019)] to obtain a complete set of VFF potentials for Si$_{y}$Ge$_{1-x-y}$(C,Sn,Pb)$_{x}$ and Si$_{x}$Ge$_{1-x}$ alloys. The analytical parametrisation exactly reproduces the relaxed elastic constants and Kleinman parameter without recourse to numerical fitting, allowing for accurate and computationally inexpensive lattice relaxation. The accuracy of the VFF potentials is demonstrated via comparison to the results of DFT supercell relaxation for (i) ordered Si (Ge) alloy supercells containing a substitutional C, Ge (Si), Sn or Pb impurity, where comparison is also made to a model analytical VFF, and (ii) disordered Si$_{x}$Ge$_{1-x}$ alloy supercells. The VFF potentials we present enable accurate and computationally inexpensive relaxation of large-scale supercells representing bulk-like group-IV alloys or group-IV heterostructures, providing input to first principles or empirical electronic structure calculations, and enabling structural analysis and calculation of strain fields in heterostructures for device applications.

First principles study on structure and electronic properties of FCC crystals for group IV

Two types of meta-crystals for IV group elements: Density functional theory calculations

Studies Of The Electronic And The Optical Properties Of The Ordered Ternary Alloys X0.5y0.5o2(X, Y = Si, Ge, Sn) By Using First-Principles Calculations

Fully analytic valence force fields for the relaxation of group-IV semiconductor alloys: elastic properties of group-IV materials calculated from first principles

Structural, Vibrational and Electronic Properties of Single Layer Hexagonal Crystals of Groups IV and V

Ab initio study of electronic properties of CoSi2 and NiSi 2 in the fluorite structure

Structural and Electronic Properties of C-Bc2n Supper Hard Material: an Ab-Initio Study

Structural, Electronic, and Optical Properties of Ordered Si1−Ge C Alloys: A First Principles Study

Optical properties and Mechanical properties of C, Si, Ge and 3C-SiC Materials Calculated from First Principles Theory

Monocrystalline silicon materials with the group IVA elements doped: A first-principles analysis

Direct correlation between electronic and optical properties of the XC monolayers (X= Si, Ge, and Sn) from first-principles calculations

First-Principles Investigation Of Electronic Structural And Optical Properties Of Rare Earth Doped Beta-Si3n4 Crystals

First-Principles Investigation of Electronic Structural and Optical Properties of Rare Earth Doped β-Si<sub>3</sub>N<sub>4</sub> Crystals

The Static, Dynamic and Electronic Properties of Liquid Gallium Studied by First-Principles Simulation

Ab Initio Study of the Ge3N4 Semiconductor Materials in its Cubic γ Phase: A Computer Simulation

First-Principles Study On The Electronic And Optical Properties Of Sn(X)Gei(1) - (X)

Theoretical investigation of the electronic and optical properties of pseudocubic Si3P4, Ge3P4 and Sn3P4

The First-principle Studies on the Electronic Structure and Bonding Characteristic of CNGS and CTGS Crystals

Numerical Study of the Electronic Structure, Elastic and Optical Properties of Defect Quaternary Semiconductor CuGaSnSe4

First-Principles Study of Monolayer and Bilayer Honeycomb Structures of Group-Iv Elements and Their Binary Compounds

First-Principles Study of Interface Relaxation Effect on Interface and Electronic Structures of Inas/Gasb Superlattices with Different Interface Types